High speed 1.3µm InGaAsP Buried Crescent Injection Lasers With Semi-Insulating Current Confinement Layer

W. H. Cheng; C. B. Su; K. D. Buehring; C. P. Chien; J. W. Ure; D. Perrachione; D. Renner; K. L. Hess; S. W. Zehr

doi:10.1364/SLA.1987.TuD3

Topical Meeting on Semiconductor Lasers
Technical Digest Series (Optica Publishing Group, 1987),
paper TuD3
•https://doi.org/10.1364/SLA.1987.TuD3

High speed 1.3µm InGaAsP Buried Crescent Injection Lasers With Semi-Insulating Current Confinement Layer

W. H. Cheng, C. B. Su, K. D. Buehring, C. P. Chien, J. W. Ure, D. Perrachione, D. Renner, K. L. Hess, and S. W. Zehr

Semiconductor Lasers 1987

Albuquerque, New Mexico United States
10–11 February 1987
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GaInAsP Lasers (TuD)

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W. H. Cheng, C. B. Su, K. D. Buehring, C. P. Chien, J. W. Ure, D. Perrachione, D. Renner, K. L. Hess, and S. W. Zehr, "High speed 1.3µm InGaAsP Buried Crescent Injection Lasers With Semi-Insulating Current Confinement Layer," in Topical Meeting on Semiconductor Lasers, Technical Digest Series (Optica Publishing Group, 1987), paper TuD3.

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Abstract

A hybrid growth technique has been used to fabricate high modulation bandwidth 1.3 µm InGaAsP buried crescent (BC) injection lasers. The technique involves a first growth of an Fe-doped semi-insulating (SI) InP current confinement layer by low pressure metal organic chemical vapor deposition (LPMOCVD) followed by a liquid phase epitaxy (LPE) regrowth. The lasers have room temperature threshold currents and differential quantum efficiencies ranging from 20 to 30 mA and 0.2 to 0.3 mW/mA/facet, respectively. A 3-dB modulation bandwidth of 5 GHz has been achieved.

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