Abstract

Surface emitting lasers are of interest for various applications such as monolithic two-dimensional arrays and optical interconnects for integrated optics. Moreover, surface emitting lasers offer the advantage of wafer processing and testing. There are several approaches to achieve surface emitting , they are (i) vertical resonator cavity, (ii) second-order grating, (iii) 45 degree mirrors and (iv) parabolic mirrors. Approaches (i) and (ii) have experienced difficulties and devices with good performance have not been obtained. Approach (iv) has demonstrated good device performance for GalnAsP/InP materials. However, this technology (mass transport) cannot be implemented in GaAlAs/GaAs materials. Therefore, 45 degree mirrors were chosen for our surface emitting device.

© 1987 Optical Society of America