Abstract

In the five years that have elapsed since the first demonstration of the phenomenon of impurity induced disordering (IID) (Laidig et al 1981) and the obvious implication to integrated optoelectronics (Holonyak et al 1981), considerable effort has been devoted to studying and utilizing this effect. It is becoming increasingly apparent that the effect is an almost universal one, being observed in a wide variety of III-V alloy systems as well as being induced by a wide variety of impurity species. Studies have been carried out using surface diffusion, ion implantation and doping during epitaxial growth. The results of this work indicate that the mechanisms are at least as complicated as the technique is universal.

© 1987 Optical Society of America