Abstract

The TIR linear spatial light modulator, which has been discussed in a number of previous publications,^1-4 is a VLSI-driven device which utilizes phase change in lithium niobate to achieve modulation of a line of light at a number of positions along a line. It does this by coupling fringing fields from a set of electrodes on a VLSI chip into the crystal and interacting with these fringing fields in a total internal reflection mode of illumination. The device is used to phase modulate the light and can be either directly read out or used in a Schlieren readout system to create intensity modulation. In this paper we present information on design, fabrication, and performance of a new high performance device which has 4735 elements and operates with a 256 MPixel/second data rate.

© 1988 Optical Society of America