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Conferences > UEO > 1997 > UG > UG3

Ultrafast Spin Relaxation in InGaAs/InP Quantum Wells for Femtoseconds Switch Applications

Atsushi Tackeuchi, Osamu Wada, and Yuji Nishikawa

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Abstract

The electron spin-relaxation time of InGaAs/InP multiple-quantum wells has been measured to be 5.2 ps for 1.54-µm excitonic absorption. This is an order of magnitude faster than in GaAs quantum wells indicating the possibility of femtoseconds all-optical gate operation in the long- wavelength region.(/p)(p)Semiconductor nonlinear optics including MQW, Alloptical devices, Ultrafast devices, Ultrafast processes in condensed matter.

© 1997 Optical Society of America

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