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Conferences > UEO > 2003 > ThB > ThB3

Ultrafast and sensitive photodetectors based on GaAs implanted by high-energy nitrogen ions

S. Wu, X. Zheng, R. Sobolewski, M. Mikulics, M. Marso, P. Kordos, S. Stancek, and P. Kovac

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Abstract

We present novel photodetectors based on nitrogen-implanted GaAs. Compared to low-temperature-grown GaAs devices, our ion-implanted GaAs detectors exhibit better sensitivity without sacrificing the ultrafast photoresponse time.

© 2003 Optical Society of America

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