Abstract

The dynamics of hot electrons in GaAs/AIGaAs structures is an area of active research for fundamental reasons and for technological applications (quantum well lasers, optical switches). Novel physical phenomena are associated with the two dimensionality of the carrier motion in these layered semiconductors. The motion of conduction band electrons in the GaAs layers is confined to the plane of the layers by the higher potential energy of the AIGaAs barriers. The transitions between the GaAs subbands are important in the relaxation of hot electrons.

© 1986 Optical Society of America