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Picosecond Decay of Photoinduced Absorption in Hydrogenated Amorphous Silicon

Dale M. Roberts and Terry L Gustafson

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Abstract

The study of the transient behavior of photogenerated carriers is helping to elucidate the mechanisms for carrier relaxation in amorphous silicon (a-Si) materials. The dynamics of hot carrier thermalization, localization, trapping, and recombination can all be probed using time resolved optical techniques. In this work we present picosecond photoinduced absorption (PA) results on hydrogenated amorphous silicon (a-Si:H) that were obtained using independently tunable pump and probe lasers.

© 1986 Optical Society of America

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