Abstract

Significant improvement in the optoelectronic properties of amorphous hydrogenated germanium (a-Ge:H) has recently been attained, and this material may become of greater technological interest in the near future. It is also an attractive physical system for femtosecond pump and probe studies with 2eV photons because with an optical gap of 1.06eV it allows studies of dynamics of photoexcited carriers with large excess energy in the band states, in contrast to similar experiments¹,² on the extensively studied a-Si:H, where the optical gap is 1.8eV and the carriers have very little excess energy.

© 1990 Optical Society of America