Abstract

Interdigitated metal-semi conductor-metal Schottky diodes [1] are attractive high performance photodetectors characterized by a fast response, high quantum efficiency and small leakage current. The key features providing the broad bandwidth of these devices are the rapid carrier sweep-out obtained by the narrow electrode spacing and the low capacitance associated with the small active area of the structure. Recently van Zegh-broeck et al.[2] have demonstrated an overall bandwidth of an MSM-GaAs-Schottky diode as large as 105 GHz. The time response has directly been analyzed in the time domain using a silicon-on-sapphire photoconductive switch controlled by the frequency doubled output of a pulse-compressed mode-locked YAG-laser (1.8ps).

© 1990 Optical Society of America