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Conferences > UP > 1990 > ThC > ThC6

Ultrafast Recombination in Ion—Damaged InP Studied by Femtosecond Luminescence

K.F. Lamprecht, R.A. Höpfel, and L. Palmetshofer

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Abstract

Ion-damaged III-V semiconductors with ultrashort carrier lifetimes are important materials for applications in ultrafast optoelectronics1. Recently, in addition to photoconductivity and far infrared techniques, optical methods such as time-resolved reflectivity2 and subpicosecond luminescence3,4 have been applied to study the recombination dynamics.

© 1990 Optical Society of America

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