Abstract
This paper investigates an optical nanocavity sensor based on a 1-D
photonic bandgap. The sensor is unique in that it provides high $Q$-factor (sensitivity), and low attenuation and wavelength
variation. It incorporates an optical splitter/combiner structure in realizing
multiple sensing. Active sensing can be achieved by implementing a p–i–n
diode. The optical diode requires an on state
power of 81 nW with rise and fall times of 0.2 ns and 0.043 ns, respectively.
The sensitivity of the active sensor, at 120, is a magnitude higher than conventional
surface sensing and is characterized with respect to the optical phase change
and by the diode biasing voltage. It will be shown that the aspect of multiple
sensing, resonant wavelengths, the $Q$-factor and transmission can be optimized by tuning the length of
the cavity and the radius of the two innermost air holes. This method allows
ease of fabrication by not having to vary the waveguide width and height to
obtain tuning effects.
© 2008 IEEE
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