Abstract

We investigate the effect of doped ${{\rm Er}^{3 +}}$ ion concentration on the Goos–Hänchen (GH) shift of a reflected beam in a Kretschmann–Raether structure, where an ${{\rm Er}^{3 +}}$-doped yttrium aluminum garnet crystal is employed as the substrate. Due to the difference in the electric dipole moment and spontaneous emission decay induced by ${{\rm Er}^{3 +}}$ ion concentration, the reflected GH shift is sensitively dependent upon ${{\rm Er}^{3 +}}$ ion concentration. Furthermore, it is demonstrated that the intensity and detuning of the control field have different effects on the magnitude, sign, and position of the GH shift under different concentrations of ${{\rm Er}^{3 +}}$ ion. Therefore, our scheme may provide a basis for selecting suitable concentrations to realize high-performance optical devices in future integrated systems.

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