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High performance and low cost transparent electrodes based on ultrathin Cu layer

David Ebner, Martin Bauch, and Theodoros Dimopoulos

Open Access Open Access

Abstract

Transparent electrodes based on an ultrathin Cu layer, embedded between two dielectrics, are optimized by simulations and experiments. Different dielectrics are screened in transfer matrix simulations for maximizing the broad-band transmittance. Based on this, sputtered electrodes were developed with the Cu embedded between TiOX-coated glass or PET substrate and an Al-doped ZnO (AZO) top layer. It is found that, for ultrathin Cu layers, increased sputter power fosters island coalescence, leading to superior optical and electrical performance compared to previously reported Cu-based electrodes. Simulations showed that the electrode design optimized with air as ambient medium has to be adapted in the case of electrode implementation in a hybrid perovskite solar cell of inverted architecture.

© 2017 Optical Society of America

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Figures (10)
Fig. 1
Fig. 1 (a) Sketch of transparent electrode layer design. (b) Simulated average transmittance in the range from λ = 400 nm to 900 nm for various material combinations with optimized dielectric layer thicknesses. The materials are ordered with increasing refractive index value at λ = 550 nm.

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Fig. 2
Fig. 2 Layer thickness difference Δd = dMat 1 – dMat 2 of various material combinations for maximum average transmittance in the spectral range from 400 nm to 900 nm.

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Fig. 3
Fig. 3 (a) Sketch of transparent electrode layer design used in this study. (b) Simulated average transmittance of a Cu7.5 electrode for different thicknesses of the TiOX and AZO layers in the wavelength range of 400-900 nm.

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Fig. 4
Fig. 4 Simulated (Sim.) and experimental (Exp.) transmittance T (solid) and reflectance R (dashed) spectra for two different sputter powers (P) and different Cu thicknesses for (a) TiOX;30/Cu5/AZO65, (b) TiOX;31/Cu7.5 /AZO60 and (c) TiOX;32/Cu10/AZO58.

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Fig. 5
Fig. 5 (a) Average transmittance T400-900, (b) sheet resistance RS and (c) Haake’s figure of merit for T400-900 as a function of Cu thickness for 40 W (green) and 100 W (orange) Cu sputter power. The measured values of commercial ITO are also depicted.

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Fig. 6
Fig. 6 SEM images of TiOx;30/Cu5 bilayer samples at different Cu sputter powers and their respective sheet resistance.

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Fig. 7
Fig. 7 Average transmittance from 400 nm to 900 nm (black circles) and sheet resistance (red squares) as a function of annealing temperature for TiOx;31/Cu7.5/AZO60.

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Fig. 8
Fig. 8 (a) Sketch of trilayer on different substrate configurations. (b) Direct transmittance (solid), total transmittance (circles) and specular reflectance (dashed) spectra of trilayer structure TiOx;31/Cu7.5/AZO60 on glass, PET and PET/AZO10 substrate.

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Fig. 9
Fig. 9 AFM images of (a) PET, (b) PET/TiOx;30 and (c) PET/AZO10/TiOx;30 including the RMS roughness, autocorrelation length (ACL) and kurtosis.

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Fig. 10
Fig. 10 (a) Sketch of the considered perovskite solar cell, (b) simulated absolute absorption in the perovskite layer of the cell in the wavelength range from 400 to 800 nm for a 7.5 nm Cu layer.

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Equations (3)

Equations on this page are rendered with MathJax. Learn more.

T(α)= T TM (α) T 0 (α) 1− R TM (α) R 0 (α)
R(α)= R 0 (α)+ T 0 2 (α) R TM (α) 1− R TM (α) R 0 (α) ,
Q j (x)= 2πc ε 0 n j k j λ | E j (x) | 2 ,
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