Abstract
A large degree of polarization () of photoluminescence (PL) approximate to 1 is obtained in each nonpolar a-plane layer grown by plasma-assisted molecular beam epitaxy (MBE) with , 0.03, and 0.10, respectively. Anisotropic in-plane strains are selectively introduced by using foreign substrates and doping with different Mg contents, which strongly modify the valence band structures, leading to anisotropic optical properties. A polarized Raman measurement shows that anisotropic in-plane strains along the and axes increase with the increasing Mg contents. Polarized PL spectra show that gradually increases to 0.97 with decreasing in-plane strains, resulting from an increasing difference in transition energy () between and caused by a lift of the degeneracy of valence band structures. The obtained highly polarized emission is close to linear polarized light, which is desirable in the backlighting of liquid crystal displays.
© 2016 Optical Society of America
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