Abstract

${\mathrm{Zn}}_{0.78}{\mathrm{Mg}}_{0.22}\mathrm{O}$ thin films were grown on a-plane sapphire substrates by plasma-assisted molecular beam epitaxy. Compared with ZnO, the crystal quality of ${\mathrm{Zn}}_{0.78}{\mathrm{Mg}}_{0.22}\mathrm{O}$ thin films degrades significantly, which results in low internal quantum efficiency (${\eta }_{\mathrm{int}}$). Besides improving the quality of ${\mathrm{Zn}}_{0.78}{\mathrm{Mg}}_{0.22}\mathrm{O}$, an effective method has been used to enhance the internal quantum efficiency and the UV emission of ${\mathrm{Zn}}_{0.78}{\mathrm{Mg}}_{0.22}\mathrm{O}$ by sputtering Al nanoparticles. Taking advantage of the resonant coupling between UV emission of ${\mathrm{Zn}}_{0.78}{\mathrm{Mg}}_{0.22}\mathrm{O}$ film and Al nanoparticle surface plasmons (SPs), a 59-fold enhancement of the UV emission and a 3.5-fold enhancement of ${\eta }_{\mathrm{int}}$ has been achieved under the optimized sputtering time. Moreover, the enhancement ratio is stable after two months. It paves a facile way in fabricating high-efficiency UV optoelectronic devices.

© 2017 Optical Society of America

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