Abstract

Flexible optoelectronic platforms, which integrate optoelectronic devices on a flexible substrate, are promising in more complex working environments benefiting from the mechanical flexibility. Herein, for the first time to the best of our knowledge, a flexible GaN-based vertical cavity surface-emitting laser (VCSEL) in the ultraviolet A (UVA) range was demonstrated by using a thin-film transfer process based on laser lift-off (LLO) and spin-coating of a flexible substrate. The lasing wavelength is 376.5 nm with a linewidth of 0.6 nm and threshold energy of 98.4 nJ/pulse, corresponding to a threshold energy density of 13.9 mJ/cm². The flexible substrate in this study is directly formed by spin-coating of photosensitive epoxy resin, which is much simplified and cost-effective, and a 2-in. wafer scale GaN-based membrane can be successfully transferred to a flexible substrate through this method. Such flexible UVA VCSELs are promising for the development of next-generation flexible and wearable technologies.

© 2024 Optica Publishing Group

Flexible GaN-based ultraviolet microdisk lasers on PET substrate

Peng Gu, Shuai Yang, Lilong Ma, Tao Yang, Xin Hou, Yang Mei, Leiying Ying, Hao Long, and Baoping Zhang
Opt. Lett. 48(15) 4117-4120 (2023)

Improving temperature characteristics of GaN-based ultraviolet laser diodes by using InGaN/AlGaN quantum wells

Jing Yang, Yu-Jie Huang, Zong-Shun Liu, Yu-Heng Zhang, Feng Liang, and De-Gang Zhao
Opt. Lett. 49(5) 1305-1308 (2024)

25 Gb/s NRZ transmission at 85°C using a high-speed 940 nm AlGaAs oxide-confined VCSEL grown on a Ge substrate

Yun-Cheng Yang, Zeyu Wan, Guei-Ting Hsu, Chih-Chuan Chiu, Wei-Hsin Chen, Markus Feifel, David Lackner, Guangrui(Maggie) Xia, and Chao-Hsin Wu
Opt. Lett. 49(3) 586-589 (2024)

Flexible GaN-based microscale light-emitting diodes with a batch transfer by wet etching

Jiangwen Wang, Qilin Hua, Wei Sha, Jiwei Chen, Xinhuan Dai, Jianan Niu, Junfeng Xiao, and Weiguo Hu
Opt. Lett. 47(19) 5052-5055 (2022)

Tailored fabrication of a self-rolled-up AlGaN/GaN tubular structure with photoelectrochemical etching

Hyunsu Hwang, Seonghun Ahn, Hyun Gyu Song, Kie Young Woo, and Yong-Hoon Cho
Opt. Lett. 49(8) 1945-1948 (2024)