Investigation of boron carbide and iridium thin films, an enabling technology for future x-ray telescopes

S. Massahi; F. E. Christensen; D. D. M. Ferreira; S. Svendsen; P. L. Henriksen; L. M. Vu; N. C. Gellert; A. S. Jegers; B. Shortt; M. Bavdaz; I. Ferreira; M. Collon; B. Landgraf; D. Girou; D. Girou; A. Sokolov; W. Schoenberger

doi:10.1364/AO.409453

Applied Optics
Vol. 59,
Issue 34,
pp. 10902-10911
(2020)
•https://doi.org/10.1364/AO.409453

Investigation of boron carbide and iridium thin films, an enabling technology for future x-ray telescopes

S. Massahi, F. E. Christensen, D. D. M. Ferreira, S. Svendsen, P. L. Henriksen, L. M. Vu, N. C. Gellert, A. S. Jegers, B. Shortt, M. Bavdaz, I. Ferreira, M. Collon, B. Landgraf, D. Girou, A. Sokolov, and W. Schoenberger

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S. Massahi, F. E. Christensen, D. D. M. Ferreira, S. Svendsen, P. L. Henriksen, L. M. Vu, N. C. Gellert, A. S. Jegers, B. Shortt, M. Bavdaz, I. Ferreira, M. Collon, B. Landgraf, D. Girou, A. Sokolov, and W. Schoenberger, "Investigation of boron carbide and iridium thin films, an enabling technology for future x-ray telescopes," Appl. Opt. 59, 10902-10911 (2020)

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Abstract

We present an experimental examination of iridium and boron carbide thin-film coatings for the purpose of fabricating x-ray optics. We use a combination of x-ray reflectometry and x-ray photoelectron spectroscopy to model the structure, composition, density, thickness, and micro-roughness of the thin films. We demonstrate in our analyses how the two characterization techniques are complementary, and from this we derive that an overlayer originating from atmospheric contamination with a thickness between 1.0–1.6 nm is present on the surface. The magnetron sputtered iridium films are measured to have a density of $22.4\; {\rm g}/{{\rm cm}^3}$. The boron carbide film exhibits a change in chemical composition in the top ${\sim}2\;{\rm nm} $ of the film surface when exposed to the ambient atmosphere. The chemical reaction occurring on the surface is due to an incorporation of oxygen and hydrogen present in the ambient atmosphere. Lastly, we present a correlation between the absorption edges and the emission lines exhibited by the thin films in an energy range from 50–800 eV and the impact on the reflectivity performance due to contamination in thin films.

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Sample ID	Material	Aimed Thickness (nm)
cs00002	Iridium	10.0
cs00004	Iridium	30.0
cs00006	Boron carbide	8.0
cs00008	Boron carbide	24.0

Material	Working Pressure (mbar)	Power (W)	Voltage (V)	Current (A)	Power Density ( $W / {c m}^{2}$ )
Iridium	$3.5 \times 10^{- 3}$	1860	600	3.10	3.10
Boron carbide	$3.5 \times 10^{- 3}$	3200	705	4.54	5.17

Sample ID	Energy (eV)	Model	Layer	Composition	Thickness (nm)	Density ( $g / {c m}^{3}$ )	Roughness (nm)
cs00002	1000	A	Top	Ir	10.0	22.2	0.36
			Intermediate 1	${S i O}_{2}$	2.0^c	2.65^d	0.39^a
			Substrate	Si	--	--	0.39^a
		B	Top	Ir	10.0	22.4^e	0.35
			Intermediate 1	${S i O}_{2}$	2.00^c	2.65^d	0.32^a
			Substrate	Si	–	–	0.32^a
		C	Top	C-H-O	1.4	${1.0}^{c}$	0.30^b
			Intermediate 2	Ir	10.0	22.4	0.30^b
			Intermediate 1	${S i O}_{2}$	2.0^c	2.65^d	0.39^a
			Substrate	Si	–	–	0.39^a
cs00002	1487	A	Top	Ir	10.0	21.8	0.26
			Intermediate 1	${S i O}_{2}$	2.0^c	2.65^d	0.39^a
			Substrate	Si	–	–	0.39^a
		B	Top	Ir	10.0	22.4^e	0.26
			Intermediate 1	${S i O}_{2}$	2.0^c	2.65^d	0.39^a
			Substrate	Si	--	--	0.39^a
		C	Top	C-H-O	1.0	1.0^c	0.23^b
			Intermediate 2	Ir	10.0	22.4	0.23^b
			Intermediate 1	${S i O}_{2}$	2.0^c	2.65^d	0.39^a
			Substrate	Si	–	–	0.39^a
cs00004	1000	A	Top	Ir	30.8	21.6	0.39
			Intermediate 1	${S i O}_{2}$	2.0^c	2.65^d	0.36^a
			Substrate	Si	--	--	0.36^a
		B	Top	Ir	30.8	22.4^e	0.40
			Intermediate 1	${S i O}_{2}$	2.0^c	2.65^d	0.35^a
			Substrate	Si	–	–	0.35^a
		C	Top	C-H-O	1.7	1.0^c	0.36^b
			Intermediate 2	Ir	30.8	22.4	0.36^b
			Intermediate 1	${S i O}_{2}$	2.0^c	2.65^d	0.36^a
			Substrate	Si	–	–	0.36^a
cs00004	1487	A	Top	Ir	30.8	21.3	0.31
			Intermediate 1	${S i O}_{2}$	2.0^c	2.65^d	0.40^a
			Substrate	Si	–	–	0.40^a
		B	Top	Ir	30.8	22.4^e	0.31
			Intermediate 1	${S i O}_{2}$	2.0^c	2.65^d	0.40^a
			Substrate	Si	–	–	0.40^a
		C	Top	C-H-O	1.4	1.0^c	0.29^b
			Intermediate 2	Ir	30.8	22.4	0.29^b
			Intermediate 1	${S i O}_{2}$	2.0^c	2.65^d	0.36^a
			Substrate	Si	–	–	0.36 $^{a}$

Sample ID	Energy (eV)	Model	Layer	Composition	Thickness (nm)	Density ( $g / {c m}^{3}$ )	Roughness (nm)
cs00006	1000	D	Top	B-C	6.0	2.2	0.45
			Intermediate 1	${S i O}_{2}$	2.0^b	2.65^c	0.35^a
			Substrate	Si	–	–	0.35^a
		E	Top	B-C-O	2.2	1.6	0.32
			Intermediate 2	B-C	3.6	2.5	0.92
			Intermediate 1	${S i O}_{2}$	2.0^b	2.65^c	0.35^a
			Substrate	Si	–	–	0.35^a
cs00006	1487	D	Top	B-C	5.5	2.3	0.47
			Intermediate 1	${S i O}_{2}$	2.0^b	2.65^c	0.35^a
			Substrate	Si	–	–	0.35^a
		E	Top	B-C-O	1.8	1.6	0.17
			Intermediate 2	B-C	3.8	2.6	1.40
			Intermediate 1	${S i O}_{2}$	2.0^b	2.65^c	0.35^a
			Substrate	Si	–	–	0.35^a
cs00008	1000	D	Top	B-C	19.5	2.3	0.43
			Intermediate 1	${S i O}_{2}$	2.0^b	2.65^c	0.35^a
			Substrate	Si	–	–	0.35^a
		E	Top	B-C-O	2.8	1.7	0.30
			Intermediate 2	B-C	16.7	2.6	1.11
			Intermediate 1	${S i O}_{2}$	2.0^b	2.65^c	0.35^a
			Substrate	Si	–	–	0.35^a
cs00008	1487	D	Top	B-C	19.3	2.4	0.42
			Intermediate 1	${S i O}_{2}$	2.0^b	2.65^c	0.35^a
			Substrate	Si	–	–	0.35^a
		E	Top	B-C-O	3.2	1.8	0.19
			Intermediate 2	B-C	16.0	2.6	1.56
			Intermediate 1	${S i O}_{2}$	2.0^b	2.65^c	0.35^a
			Substrate	Si	–	–	0.35^a

Sample ID	Material	Aimed Thickness (nm)
cs00002	Iridium	10.0
cs00004	Iridium	30.0
cs00006	Boron carbide	8.0
cs00008	Boron carbide	24.0

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Applied Optics