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Abstract
We report on a low dark current density P-B-i-N extended short-wavelength infrared photodetector with atomic layer deposited (ALD) ${{\rm Al}_2}{{\rm O}_3}$ passivation based on a InAs/GaSb/AlSb superlattice. The dark current density of the ${{\rm Al}_2}{{\rm O}_3}$ passivated device was reduced by 38% compared to the unpassivated device. The cutoff wavelength of the photodetector is 1.8 µm at 300 K. The photodetector exhibited a room-temperature (300 K) peak responsivity of 0.44 A/W at 1.52 µm, corresponding to a quantum efficiency of 35.8%. The photodetector exhibited a specific detectivity (${\rm D}^*$) of ${1.08} \times {{10}^{11\:}}{{\rm cm \cdot Hz}^{1/2}}/{\rm W}$ with a low dark current density of ${3.4} \times {{10}^{- 5}}\;{\rm A}/{{\rm cm}^2}$ under ${-}{50}\;{\rm mv}$ bias at 300 K. The low dark current density ${{\rm Al}_2}{{\rm O}_3}$ passivated device is expected to be used in the fabrication of extended short-wavelength infrared focal plane arrays for imaging.
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