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Abstract
Organic–inorganic metal halide perovskite-based photodetectors (PDs) have attracted great attention because they exhibit extraordinary optoelectronic performances due to advantages such as a low trap-state density and large absorption coefficient. As a buffer layer, ${\rm{G}}{{\rm{a}}_2}{{\rm{O}}_3}$ can block electron hole recombination, passivate an Si surface, reduce trap density, and improve the ability of electron tunneling. Here, we demonstrate a trilayer hybrid structure (${\rm{Si}}/{\rm{G}}{{\rm{a}}_2}{{\rm{O}}_3}/{{\rm{CH}}_3}{{\rm{NH}}_3}{\rm{Pb}}{{\rm{I}}_3}$) composed of an n-type silicon wafer, ${\rm{G}}{{\rm{a}}_2}{{\rm{O}}_3}$ interlayer, and ${{\rm{CH}}_3}{{\rm{NH}}_3}{\rm{Pb}}{{\rm{I}}_3}$ thin film. The effect of different ${\rm{G}}{{\rm{a}}_2}{{\rm{O}}_3}$ layer thicknesses on the characteristics of a PD was studied, which shows that the responsivity first increases and then decreases with an increase in the ${\rm{G}}{{\rm{a}}_2}{{\rm{O}}_3}$ film thickness; the optimized ${\rm{G}}{{\rm{a}}_2}{{\rm{O}}_3}$ thickness is 300 nm. Additionally, the optimal responsivity, detectivity, and the rise and decay times are ${7.2}\;{\rm{mA}}\;{{\rm{W}}^{- 1}}$, ${7.448} \times {{1}}{{{0}}^{10}}$ Jones, and 39 and 1.7 ms, respectively. This device has a better performance because ${\rm{G}}{{\rm{a}}_2}{{\rm{O}}_3}$ and perovskite have a matched energy level. We believe our work could provide a new way to fabricate high-performance optoelectronic devices.
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