Simulation and design of a high-speed and high-power modified uni-traveling carrier photodiode based on the electric field distribution in the depletion region

Xuejie Wang; Yongqing Huang; Ren Ren; Jiawei Du; Mingxi Yang; Kai Liu; Xiaofeng Duan; Xiaomin Ren

doi:10.1364/AO.478663

Applied Optics
Vol. 62,
Issue 4,
pp. 1057-1065
(2023)
•https://doi.org/10.1364/AO.478663

Simulation and design of a high-speed and high-power modified uni-traveling carrier photodiode based on the electric field distribution in the depletion region

Xuejie Wang, Yongqing Huang, Ren Ren, Jiawei Du, Mingxi Yang, Kai Liu, Xiaofeng Duan, and Xiaomin Ren

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Xuejie Wang, Yongqing Huang, Ren Ren, Jiawei Du, Mingxi Yang, Kai Liu, Xiaofeng Duan, and Xiaomin Ren, "Simulation and design of a high-speed and high-power modified uni-traveling carrier photodiode based on the electric field distribution in the depletion region," Appl. Opt. 62, 1057-1065 (2023)

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Table of Contents Category
- Optical Devices, Sensors, and Detectors
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About this Article
History
- Original Manuscript: October 20, 2022
- Revised Manuscript: December 26, 2022
- Manuscript Accepted: January 4, 2023
- Published: January 30, 2023

Abstract

A modified uni-traveling carrier photodiode with an electric field control layer is proposed to achieve high-speed and high-power performance at a lower bias voltage. By inserting the 10 nm p-type InGaAs electric field control layer between the intrinsic absorption layer and space layer, the electric field distribution in the depleted absorption layer and depleted non-absorption layer can be changed. It is beneficial for reducing power consumption and heat generation, meanwhile suppressing the space-charge effect. Compared with the original structure without the electric field control layer, the 3 dB bandwidth of the 20 µm diameter novel structure, to the best of our knowledge, is improved by 27.1% to 37.5 GHz with a reverse bias of 2 V, and the RF output power reaches 23.9 dBm at 30 GHz. In addition, under 8 V bias voltage, the bandwidth reaches 47.3 GHz.

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Parameter	InP	$I n_{0.53} G a_{0.47} A s$
Electron mobility, $μ_{n}$	$5400 c m^{2} / V s$	$12000 {c m}^{2} / V s$
Hole mobility, $μ_{p}$	$200 c m^{2} / V s$	$300 {c m}^{2} / V s$
Valence band density of states, $N_{V}$	$1.1 \times 1 0^{19} c m^{- 3}$	$7.7 \times 1 0^{18} c m^{- 3}$
Conduction band density of states, $N_{C}$	$5.7 \times 1 0^{17} c m^{- 3}$	$2.1 \times 1 0^{17} c m^{- 3}$
Electron saturation velocity	$2.6 \times 1 0^{7} c m / s$	$2.5 \times 1 0^{7} c m / s$
Hole saturation velocity	$6.6 \times 1 0^{6} c m / s$	$5 \times 1 0^{6} c m / s$
Electron and hole lifetime	$2 \times 1 0^{- 9} s$	$1 \times 1 0^{- 7} s$
Electron Auger coefficient	$3.7 \times 1 0^{- 31} c m^{6} / s$	$3.2 \times 1 0^{- 28} {c m}^{6} / s$
Hole Auger coefficient	$8.7 \times 1 0^{- 30} c m^{6} / s$	$3.2 \times 1 0^{- 28} {c m}^{6} / s$
Real refractive index (1550 nm)	3.2	3.51
Imaginary refractive index (1550 nm)	0	0.106

Optical Intensity [ $W / {c m}^{2}$ ]		$1 \times 1 0^{4}$	$2 \times 1 0^{4}$	$3 \times 1 0^{4}$	$4 \times 1 0^{4}$	$5 \times 1 0^{4}$	$6 \times 1 0^{4}$	$7 \times 1 0^{4}$	$8 \times 1 0^{4}$	$9 \times 1 0^{4}$
Electron velocity	In the InGaAs depleted layer	2.51E7	2.51E7	2.52E7	2.52E7	2.54E7	2.58E7	2.62E7	2.52E7	2.36E7
	In the InP depleted layer	2.69E7	2.72E7	2.75E7	2.77E7	2.8E7	2.82E7	2.84E7	2.86E7	2.89E7
Hole velocity in the InGaAs depleted layer		2.9E6	2.84E6	2.78E6	2.7E6	2.61E6	2.5E6	2.39E6	2.25E6	2.12E6

Layer	Thickness [nm]	Doping Level [ $c m^{- 3}$ ]
$I n_{0.53} G a_{0.47} A s$	50	2e19/P
InGaAsP (Q1.4)	40	2e18/P
$I n_{0.53} G a_{0.47} A s$	250	5e18∼2.5e17/P
$I n_{0.53} G a_{0.47} A s$	240	1e15/U
$I n_{0.53} G a_{0.47} A s$	10	4e17/P
InGaAsP (Q1.4)	15	1e15/N
InGaAsP (Q1.1)	15	1e15/N
InP	20	1e17/N
InP	580	1e16/N
InP	400	1e19/N
$I n_{0.53} G a_{0.47} A s$	20	1e19/N
InP	400	1e19/N
InP	500	1.5e18/N
Semi-insulating InP substrate

Optical Intensity [ $W / {c m}^{2}$ ]		$1 \times 1 0^{4}$	$2 \times 1 0^{4}$	$3 \times 1 0^{4}$	$4 \times 1 0^{4}$	$5 \times 1 0^{4}$	$6 \times 1 0^{4}$	$7 \times 1 0^{4}$	$8 \times 1 0^{4}$	$9 \times 1 0^{4}$
2 V	MUTC-PD1	29	29	29.5	29.5	29.5	29.5	29.5	29.5	29.5
	MUTC-PD2	37.5	37.5	37.5	37.5	37.3	37	36.5	36	35
4 V	MUTC-PD1	40	41	41	42	42	43	43	43.5	44
	MUTC-PD2	44.5	44.5	45	45.3	45.3	45.4	45.3	45.2	44.4
6 V	MUTC-PD1	45	45	46	46	46	46	46	46	46
	MUTC-PD2	46.5	46.5	46.5	46.3	46.3	46.2	46	46	45.7
8 V	MUTC-PD1	46	46	46	46	46	46	46	46	46
	MUTC-PD2	47.3	47.5	47.3	47.3	47.2	47.1	47	46.5	46.8

Reference	Bias	Bandwidth	RF Output Power
[24]	5 V	28 GHz (22 µm diameter)	20.1 dBm at 28 GHz
[25]	4 V	40 GHz (20 µm diameter)	14.3 dBm at 50 GHz
[26]	0 V	36.7 GHz (10 µm diameter)	10.64 dBm at 30 GHz
[27]	2 V	38 GHz	8 dBm at 40 GHz
	4 V	38 GHz (Packaged module)	11 dBm at 40 GHz
MUTC-PD1	2 V	Shown in Table 4	24.6 dBm at 20 GHz 23.15 dBm at 30 GHz
MUTC-PD2	2 V	(20 µm diameter)	25.15 dBm at 20 GHz 23.9 dBm at 30 GHz

Abstract

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Applied Optics