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Abstract
Modified near-ballistic uni-traveling-carrier photodiodes with improved overall performances were studied theoretically and experimentally. A bandwidth up to 0.2 THz with a 3 dB bandwidth of 136 GHz and large output power of 8.22 dBm (99 GHz) under the ${-}{{2}}\;{\rm{V}}$ bias voltage were obtained. The device exhibits good linearity in the photocurrent-optical power curve even at large input optical power, with a responsivity of 0.206 A/W. Physical explanations for the improved performances have been made in detail. The absorption layer and the collector layer were optimized to retain a high built-in electric field around the interface, which not only ensures the smoothness of the band structure but also facilitates the near-ballistic transmission of uni-traveling carriers. The obtained results may find potential applications in future high-speed optical communication chips and high-performance terahertz sources.
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