Nonlinear optical properties and carrier recombination lifetime of GaN

Amelia Carpenter; Amelia Carpenter; Joel Murray; Joel Murray; Lauren M Loftus; Lauren M Loftus; Alán Martinez; Robert Turner; Robert Turner; Partha Banerjee; Shekhar Guha; Shekhar Guha

doi:10.1364/AO.479676

Applied Optics
Vol. 62,
Issue 5,
pp. 1152-1159
(2023)
•https://doi.org/10.1364/AO.479676

Nonlinear optical properties and carrier recombination lifetime of GaN

Amelia Carpenter, Joel Murray, Lauren M Loftus, Alán Martinez, Robert Turner, Partha Banerjee, and Shekhar Guha

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Amelia Carpenter, Joel Murray, Lauren M Loftus, Alán Martinez, Robert Turner, Partha Banerjee, and Shekhar Guha, "Nonlinear optical properties and carrier recombination lifetime of GaN," Appl. Opt. 62, 1152-1159 (2023)

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Table of Contents Category
- Nonlinear Optics
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About this Article
History
- Original Manuscript: October 31, 2022
- Revised Manuscript: December 29, 2022
- Manuscript Accepted: December 31, 2022
- Published: February 2, 2023

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Abstract

Nonlinear optical properties of a selection of gallium nitride samples have been measured using picosecond and nanosecond duration laser pulses at 532 nm. The values of the two-photon absorption coefficient, free carrier absorption cross section, and free carrier refraction cross section are determined along with the recombination lifetime of photogenerated carriers. The effect of hot isostatic pressing on these properties in samples with linear absorption at the band edge due to defects is explored.

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		Dimensions	Dislocation
		( $m m \times m m \times$	Density
Sample Name	Vendor	mm)	( $\times 10^{6} {c m}^{- 2}$ )
GaN 1	Kyma Technologies	$6 \times 5 \times 0.33$	$< 1$
GaN 2	Kyma Technologies	$10 \times 10 \times 0.39$	$< 1$
GaN-LU-1	Mitsubishi	$10 \times 10 \times 0.32$	Not given
	Chemical Corp
GaN 6	Kyma Technologies	$18 \times 18 \times 0.38$	$< 1$
GaN 8	MSE Supplies	$10 \times 10 \times 0.37$	0.5–3

Original Sample Name	Diced, but Otherwise Unchanged Pieces
GaN 2	GaN 2_1, GaN 2_2, GaN 2_3, GaN 2_4
GaN 6	GaN 6_1, GaN 6_2, GaN 6_3, GaN 6_4

Sample Name		HIP Parameters
GaN 2	GaN 6	None, original sample
GaN 2_1	GaN 6_1	None, control sample
GaN 2_2_1		825°C 4 h soak time
GaN 2_3_1	GaN 6_3_1	925°C 4 h soak time
GaN 2_4_1	GaN 6_4_1	925°C 6 h soak time

Author	Year	Wavelength (nm)	$β$ (cm/GW)
Huang et al. [11]	1999	387	17
Huang et al. [11]	1999	391	14
Krishnamurthy et al. [12]	2000	600	15
Sun et al. [13]	2000	377	12
		387	17
		390	14
		391	14
		400	16
		690	7
		720	3
Pacebutas et al. [14]	2001	527	17–20
Manoel et al. [10]	2019	Varied	0.9–2

	$β$ (cm/GW)	$σ_{a}$ ( ${c m}^{2} \times 10^{- 18}$ )	$σ_{r}$ ( ${c m}^{3} \times 10^{- 21}$ )
Fits	5.2	5.4	1.2
Said [15]	5.8	–	0.8
Lee [16]	5.8	0.8	0.6

	$β$ (cm/GW)	$σ_{a}$ ( ${c m}^{2} \times 10^{- 18}$ )	$σ_{r}$ ( ${c m}^{3} \times 10^{- 22}$ )
GaN 1	3.8	$≲ 0.6$	$≲ 0.6$
GaN 2_1	4.1	$< 3.3$	$< 0.5$
GaN 2_2_1	4.4	$< 1.8$	$< 0.5$
GaN 2_3_1	4.7	$< 6.0$	$< 0.5$
GaN 2_4_1	5.2	$< 9.5$	$< 1.6$
GaN-LU-1	2.9	1.5	0.6
GaN 6_1	2.8	1.6	2.2
GaN 6_3_1	3.9	$≲ 1.0$	$≲ 0.7$
GaN 6_4_1	3.7	$≲ 1.6$	$≲ 2.0$
GaN 8	3.6	$< 8.0$	$< 2.3$

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Applied Optics