Design and optimization of the grating coupler in the 2 µm band

Anxin Wang; Shuxiao Wang; Shun Zhang; Yan Cai; Yan Cai

doi:10.1364/AO.481954

Applied Optics
Vol. 62,
Issue 5,
pp. 1369-1375
(2023)
•https://doi.org/10.1364/AO.481954

Design and optimization of the grating coupler in the 2 µm band

Anxin Wang, Shuxiao Wang, Shun Zhang, and Yan Cai

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Anxin Wang, Shuxiao Wang, Shun Zhang, and Yan Cai, "Design and optimization of the grating coupler in the 2 µm band," Appl. Opt. 62, 1369-1375 (2023)

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- Optical Devices, Sensors, and Detectors
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About this Article
History
- Original Manuscript: November 28, 2022
- Revised Manuscript: January 6, 2023
- Manuscript Accepted: January 8, 2023
- Published: February 7, 2023

Abstract

This paper mainly discusses the design and optimization of the grating coupler for the 2 µm band and selects the top layer silicon with a thickness of 0.34 µm according to the characteristics of the waveguide mode field. The TE polarization uniform grating coupler with a high coupling efficiency is achieved by scanning the etched depth and etched length, with the simulated coupling efficiency of ${-}{2.28}\;{\rm dB}$. To further improve the performance, we optimize the grating coupler with the scattering strength. A TE polarization nonuniform grating coupler with a center wavelength of 2 µm is designed. The simulated coupling efficiency of the grating coupler is ${-}{1.88}\;{\rm dB}$. The fabricated uniform grating coupler shows a center wavelength of 2 µm and a peak coupling efficiency of ${-}{5.07}\;{\rm dB}$. The fabricated nonuniform grating coupler shows a center wavelength of 2 µm and a peak coupling efficiency of ${-}{4.1}\;{\rm dB}$.

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Data underlying the results presented in this paper are not publicly available at this time but may be obtained from the authors upon reasonable request.

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Number	Materials	Materials Thickness	Grating Structure	Coupling Efficiency of the Simulation	Coupling Efficiency of the Experiment
1^a	Si	0.34 µm	Nonuniform	−1.88 dB at 2 µm	−4.1 dB at 2 um
2^a	Si	0.34 µm	Uniform	−2.28 dB at 2 µm	−5.07 dB at 2 µm
3	Si [11]	0.22 µm	Uniform	−5 dB at 1.95 µm	−8.4 dB at 1.95 µm
4	Si [8]	0.22 µm	Deposit 0.16 µm polysilicon	−3.2 dB at 2.25 µm	−5.2 dB at 2.15 µm
5	Ge [10]	0.22 µm	Uniform	−6.2 dB at 1.95 µm	−6.5 dB at 1.95 µm
6	Si [9]	0.22 µm	Hollowing out the buried oxide layer	−3.54 dB at 2.75 µm	−6.07 dB at 2.75 µm
7	Ge [19]	0.6 µm	Hollowing out the buried oxide layer	−4.5 dB at 2.38 µm	−11 dB at 2.38 µm
8	${A s}_{2} S_{3}$ [11]	0.6 µm	Uniform	−3 dB at 2 µm	−4.5 dB at 1.95 µm

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Applied Optics