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Abstract
Multilayer graphene (MLG) thin films were produced by a sputtering technique on a cobalt buffer-layer prepared at 500°C and thermal annealed after the deposition. The transformation of amorphous carbon (C) to graphene occurs by diffusion of C atoms through the catalyst metal; then the C atoms dissolved in the metal are nucleated as graphene. The thicknesses of cobalt and MLG thin films were 55 and 54 nm, respectively, obtained by atomic force microscopy (AFM). Raman spectroscopy showed that the ratio between the Raman bands 2D and G (${{\rm I}_{2{\rm D}}}/{{\rm I}_{\rm G}}$) was 0.4 for the graphene thin film that was annealed at 750°C for 25 min, indicating that the films obtained are MLG. The Raman results were corroborated by transmission electron microscopy analysis. AFM was used to determine the Co and C film thickness and roughness. Transmittance measurements at 980 nm as a function of input power from a continuous-wave diode laser showed that the obtained MLG films present large nonlinear absorption and can be used as optical limiters.
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