Effect of sputtering power on the physical properties of amorphous SiO<sub>2</sub>-doped InZnO transparent conductive oxide

Jin Young Hwang; Sang Yeol Lee

doi:10.1364/AO.505798

Applied Optics
Vol. 63,
Issue 1,
pp. 249-254
(2024)
•https://doi.org/10.1364/AO.505798

Effect of sputtering power on the physical properties of amorphous SiO₂-doped InZnO transparent conductive oxide

Jin Young Hwang and Sang Yeol Lee

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Jin Young Hwang and Sang Yeol Lee, "Effect of sputtering power on the physical properties of amorphous SiO₂-doped InZnO transparent conductive oxide," Appl. Opt. 63, 249-254 (2024)

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Abstract

In order to control the optical and electrical properties of the transparent conductive oxide, the radio frequency (RF) sputtering power was changed from 30 to 40, 50, and 60 W. To optimize the power condition of the SiInZnO (SIZO) layer, we changed the sputtering power from 30 to 60 W, systematically. The chemical properties of the SIZO layer were analyzed using X-ray photoelectron spectroscopy (XPS). XPS proved that this change is dominant in thickness. In order to fabricate the SIZO transparent conducting oxide (TCO) with the optimized power of 50 W, the transmittance of 99.1% at 550 nm and the figure of merit of ${12.4} \times {{10}^{- 3}}\;{\Omega ^{- 1}}$ were obtained.

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Data underlying the results presented in this paper are not publicly available at this time but may be obtained from the authors upon reasonable request.

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	1 SIZO 30 W	1 SIZO 40 W	1 SIZO 50 W	1 SIZO 60 W
Carrier concentration ( ${c m}^{- 3}$ )	$1.97 \times 10^{20}$	$2.95 \times 10^{20}$	$3.70 \times 10^{20}$	$5.23 \times 10^{20}$
Mobility ( ${c m}^{2} / V \cdot s$ )	35.54	28.57	33.57	35.10
Resistivity ( $Ω \cdot {c m}^{- 3}$ )	$8.91 \times 10^{- 4}$	$1.09 \times 10^{- 3}$	$5.02 \times 10^{- 4}$	$6.79 \times 10^{- 4}$
Transmittance (%, 550 nm)	82.231	91.202	99.098	92.966
Average transmittance (%, 380–780 nm)	82.599	90.801	97.592	93.087

	Thin Films	Transmittance (%, 550 nm)	Carrier Concentration ( $10^{20} {c m}^{- 3}$ )	Resistivity ( $10^{- 4} Ω \cdot c m$ )	Refs.
1	GZO	85	1.3	1.7	[7]
2	AZO	91	1.1	9.9	[8]
3	ITO	90	2.0	0.1	[10]
4	IZO	84	5.5	3.2	[11]
5	SIZO	99	3.7	3.7	This work

	Peak Area Ratio
Deposition Power	O 1s	Si 2p	In ${3 d}_{5 / 2}$	Zn ${2 p}_{3 / 2}$
30 W	40.17	2.35	49.72	7.76
40 W	40.04	2.35	49.26	8.35
50 W	40.20	2.11	49.41	8.28
60 W	40.76	1.66	49.43	8.15

	1 SIZO 30 W	1 SIZO 40 W	1 SIZO 50 W	1 SIZO 60 W
Carrier concentration ( ${c m}^{- 3}$ )	$1.97 \times 10^{20}$	$2.95 \times 10^{20}$	$3.70 \times 10^{20}$	$5.23 \times 10^{20}$
Mobility ( ${c m}^{2} / V \cdot s$ )	35.54	28.57	33.57	35.10
Resistivity ( $Ω \cdot {c m}^{- 3}$ )	$8.91 \times 10^{- 4}$	$1.09 \times 10^{- 3}$	$5.02 \times 10^{- 4}$	$6.79 \times 10^{- 4}$
Transmittance (%, 550 nm)	82.231	91.202	99.098	92.966
Average transmittance (%, 380–780 nm)	82.599	90.801	97.592	93.087

	Thin Films	Transmittance (%, 550 nm)	Carrier Concentration ( $10^{20} {c m}^{- 3}$ )	Resistivity ( $10^{- 4} Ω \cdot c m$ )	Refs.
1	GZO	85	1.3	1.7	[7]
2	AZO	91	1.1	9.9	[8]
3	ITO	90	2.0	0.1	[10]
4	IZO	84	5.5	3.2	[11]
5	SIZO	99	3.7	3.7	This work

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Applied Optics