A-Si/SiO<sub>2</sub> nanolaminates for tuning the complex refractive index and band gap in optical interference coatings

Karl Kreuzer; Philipp Henning; Michael Vergöhl; Stefan Bruns; Thomas Melzig; Christian Patzig; René Feder

doi:10.1364/AO.515083

Applied Optics
Vol. 63,
Issue 6,
pp. 1641-1647
(2024)
•https://doi.org/10.1364/AO.515083

A-Si/SiO₂ nanolaminates for tuning the complex refractive index and band gap in optical interference coatings

Karl Kreuzer, Philipp Henning, Michael Vergöhl, Stefan Bruns, Thomas Melzig, Christian Patzig, and René Feder

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Karl Kreuzer, Philipp Henning, Michael Vergöhl, Stefan Bruns, Thomas Melzig, Christian Patzig, and René Feder, "A-Si/SiO₂ nanolaminates for tuning the complex refractive index and band gap in optical interference coatings," Appl. Opt. 63, 1641-1647 (2024)

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Abstract

A-${\rm Si}/{{\rm SiO}_2}$ nanolaminates are deposited by magnetron sputtering and show a decreasing absorption when the a-Si single-layer thickness is reduced from $2.4\;{\rm nm}$ to $0.7\;{\rm nm}$. Moreover, an increase of the Tauc band gap by $0.18\;{\rm eV}$ is measured. Experimental Tauc band gaps are compared to calculated effective band gaps, utilizing a numerical Schrödinger solver. Further, it is demonstrated that the refractive index can be controlled by adjusting the a-Si and ${{\rm SiO}_2}$ single-layer thicknesses in the nanolaminates. The nanolaminates are optically characterized by spectroscopic ellipsometry, transmittance, and reflectance measurements. Additionally, TEM images reveal uniform, well-separated layers, and EDX measurements show the silicon and oxygen distribution in the nanolaminates.

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Supplementary Material (1)

Name	Description
Supplement 1	Full transmittance and reflectance spectra

Data availability

Data underlying the results presented in this paper are not publicly available at this time but may be obtained from the authors upon reasonable request.

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Property	Value
Band gap (a-Si)	$1.26 e V$ [28]
Band gap ( ${S i O}_{2}$ )	$7.4 e V$ [29]
Eff. electron mass $\frac{m_{e}}{m_{0}}$	0.33 [30]
Eff. hole mass $\frac{m_{h}}{m_{0}}$	0.56 [30]
Bandgap discontinuity $\frac{Δ E_{c}}{Δ E_{v}}$	50:50

Sample	$d_{S i}$ [ $n m$ ]	$d_{{S i O}_{2}}$ [ $n m$ ]	$d_{S i, t o t a l}$ [ $n m$ ]	$P$ [ $k W$ ]
$A^{187}$	0.7	3.1	131	2.11
$B^{103}$	1.3	2.9	134	2.64
$C^{71}$	1.9	2.7	135	3.16
$D^{56}$	2.5	2.6	140	3.69

Samples	$d_{a - S i, T E M}$ [nm]	$d_{a - S i, O C}$ [nm]	$d_{S i O_{2}, T E M}$ [nm]	$d_{{S i O}_{2}, O C}$ [nm]
$A^{187 / 5}$	0.8	0.7	3.0	3.1
$B^{103 / 5}$	1.3	1.3	3.0	2.9
$C^{76 / 5}$	2.0	1.9	3.1	2.7
$D^{56 / 5}$	2.5	2.5	2.7	2.6

Sample	$E_{S}$ [eV]	$E_{T a u c}$ [eV]	$d_{S i}$ [nm]
$A^{187}$	2.93	2.18	0.7
$B^{103}$	1.96	2.06	1.3
$C^{76}$	1.64	2.02	1.9
$D^{56}$	1.49	2.00	2.5

Property	Value
Band gap (a-Si)	$1.26 e V$ [28]
Band gap ( ${S i O}_{2}$ )	$7.4 e V$ [29]
Eff. electron mass $\frac{m_{e}}{m_{0}}$	0.33 [30]
Eff. hole mass $\frac{m_{h}}{m_{0}}$	0.56 [30]
Bandgap discontinuity $\frac{Δ E_{c}}{Δ E_{v}}$	50:50

Abstract

Supplementary Material (1)

Data availability

Cited By

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Tables (4)

Equations (1)

Applied Optics