Abstract
Two types of analog memory cells realized in a 3-µm
low temperature polycrystalline silicon (LTPS) technology are
proposed to achieve low power application for thin film transistor
liquid crystal displays (TFT-LCDs). By employing the inversion
signal in the storage capacitor with complementary source follower,
the frame rate to refresh the static image can be reduced
from 60 to 3.16 Hz with the output decay less than 0.1 V under the
input data from 1 to 4 V. To further diminish threshold voltage
drop from source follower structure, a compensation technique is
implemented to the proposed analog memory cells. In addition,
asymmetric output voltage can be also minimized by adding a
reference voltage to achieve symmetric output waveform.
© 2011 IEEE
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