Abstract

A Si-based light modulator working in the near infrared at frequencies up to 300 kHz is proposed. The device proposed is a bipolar mode field effect transistor (BMFET) integrated in an Si rib waveguide. The operation principle is the light dispersion/absorption by a plasma of free carriers that can be moved in or out of the optical path. It works as a pure amplitude light modulator; hence, it can be shrunk. Its small dimensions, only 100 µm in length and less than 50 µm in width in the proposed version, make it suitable for monolithic integration for applications where the major constraints are the device dimensions. As an example, the device application to an integrated gas sensing or chemical absorption spectroscopy system is also described.

© 2006 IEEE

Impact of nonlinear effects in Si towards integrated microwave-photonic applications

Jake Bass, Huong Tran, Wei Du, Richard Soref, and Shui-Qing Yu
Opt. Express 29(19) 30844-30856 (2021)

Integrated visible-light liquid-crystal-based phase modulators

Milica Notaros, Thomas Dyer, Manan Raval, Christopher Baiocco, Jelena Notaros, and Michael R. Watts
Opt. Express 30(8) 13790-13801 (2022)

Two-dimensional spatial light modulators fabricated in Si/PLZT

Tsen-Hwang Lin, A. Ersen, J. H. Wang, S. Dasgupta, S. Esener, and S. H. Lee
Appl. Opt. 29(11) 1595-1603 (1990)

Optical characterization at 7.7 µm of an integrated platform based on chalcogenide waveguides for sensing applications in the mid-infrared

Aldo Gutierrez-Arroyo, Emeline Baudet, Loïc Bodiou, Jonathan Lemaitre, Isabelle Hardy, François Faijan, Bruno Bureau, Virginie Nazabal, and Joël Charrier
Opt. Express 24(20) 23109-23117 (2016)

Integration of a high-efficiency Mach-Zehnder modulator with a DFB laser using membrane InP-based devices on a Si photonics platform

Tatsurou Hiraki, Takuma Aihara, Takuro Fujii, Koji Takeda, Yoshiho Maeda, Takaaki Kakitsuka, Tai Tsuchizawa, and Shinji Matsuo
Opt. Express 29(2) 2431-2441 (2021)