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Optica Publishing Group
  • Journal of Lightwave Technology
  • Vol. 33,
  • Issue 3,
  • pp. 657-662
  • (2015)

30-Gb/s Optical Link Combining Heterogeneously Integrated III–V/Si Photonics With 32-nm CMOS Circuits

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Abstract

We present a silicon photonics optical link utilizing heterogeneously integrated photonic devices driven by low-power advanced 32-nm CMOS integrated circuits. The photonic components include a quantum-confined Stark effect electroabsorption modulator and an edge-coupled waveguide photodetector, both made of III–V material wafer bonded on silicon-on-insulator wafers. The photonic devices are wire bonded to the CMOS chips and mounted on a custom PCB card for testing. We demonstrate an error-free operation at data rates up to 30 Gb/s and transmission over 10 km at 25 Gb/s with no measured sensitivity penalty and a timing margin penalty of 0.2 UI.

© 2014 IEEE

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