Abstract

High-speed top-illuminated avalanche photodiodes (APDs) with large diameters (25 μm) are demonstrated for the application of 4-channels 100 Gb/s data rate. They achieve a bandwidth of 17 GHz at low-gain (M_G = 6.2; 3.6 A/W) and large-gain bandwidth (responsivity bandwidth) product (410 GHz (237.8 GHz-A/W); 55% external efficiency at the unit gain) while maintaining invariant high speed (14 GHz) under high power (0.5 mW) and 0.9 V_br operations. By packaging the demonstrated APD with a 25 Gb/s transimpedance amplifier in a 100 Gb/s ROSA package, a good sensitivity of around –20.6 dBm optical modulation amplitude (OMA) at the data rate of 25.78 Gb/s has been successfully demonstrated. The achieved sensitivity not only meets the required receiver sensitivity (–18.5 dBm OMA) in 100 GbE-ER-4 Lite (40 km) system, it is also comparable with that of the high-performance 100 Gb/s ROSA incorporated with the back-side illuminated APD design. Overall, our novel APD structure can eliminate the costly flip-chip bonding package in the 100 Gb/s ROSA without sacrificing its sensitivity performance.

© 2018 IEEE

Simultaneous enhancement of the bandwidth and responsivity in high-speed avalanche photodiodes with an optimized flip-chip bonding package

Naseem, Nan-Wei Chen, Syed Hasan Parvez, Zohauddin Ahmad, Sean Yang, H-S Chen, Hsiang-Szu Chang, Jack Jia-Sheng Huang, and Jin-Wei Shi
Opt. Express 31(16) 26463-26473 (2023)

64  Gb/s low-voltage waveguide SiGe avalanche photodiodes with distributed Bragg reflectors

Binhao Wang, Zhihong Huang, Yuan Yuan, Di Liang, Xiaoge Zeng, Marco Fiorentino, and Raymond G. Beausoleil
Photon. Res. 8(7) 1118-1123 (2020)

NDR-effect vertical-illumination-type Ge-on-Si avalanche photodetector

Gyungock Kim, Sanghoon Kim, Sun Ae Kim, Jin Hyuk Oh, and Ki-Seok Jang
Opt. Lett. 43(22) 5583-5586 (2018)

High-speed waveguide Ge/Si avalanche photodiode with a gain-bandwidth product of 615 GHz

Yuluan Xiang, Hengzhen Cao, Chaoyue Liu, Jingshu Guo, and Daoxin Dai
Optica 9(7) 762-769 (2022)

Silicon–germanium avalanche photodiodes with direct control of electric field in charge multiplication region

Xiaoge Zeng, Zhihong Huang, Binhao Wang, Di Liang, Marco Fiorentino, and Raymond G. Beausoleil
Optica 6(6) 772-777 (2019)