Abstract

SiO $_{2}$ –HfO $_{2}$ rib waveguides were fabricated using the UV-photolithography method followed by wet chemical etching technique. Graphene oxide (GO) integrated SiO $_{2}$ –HfO $_{2}$ rib waveguide works as an on-chip TE-pass waveguide polarizer and also allows controlled intensity tuning of the selective state of polarization when irradiated using a 532 nm ns laser. The tuning of the TE polarization intensity was confirmed by performing the experiments at three different pump fluences viz., 0.2, 0.3, and 0.6 mJ/cm $^{2}$ , wherein at low pump fluence, TE polarization intensity showed more controlled absorption. The results indicate that GO integrated glass waveguides can act as efficient polarization dependent power splitters for integrated optic applications.

© 2019 IEEE

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