Abstract

Modulation linearity of Si ring modulators (RMs) is investigated through the numerical simulation based on the coupled-mode theory and experimental verification. Numerical values of the key parameters needed for the simulation are experimentally extracted. Simulation and measurement results agree well. With these, the influence of input optical wavelength and power on the Si RM linearity are characterized.

Linear and nonlinear characterization of a broadband integrated Si-rich silicon nitride racetrack ring resonator for on-chip applications

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