Abstract
We report Al0.3InAsSb/Al0.7InAsSb digital alloy n-barrier-n (nBn) photodetectors that operate in the 2-µm wavelength window. The AlxIn1-xAsySb1-y digital alloy material system exhibits near-zero valence-band offset, which is beneficial for nBn photodetectors. At 300 K these Al0.3InAsSb/Al0.7InAsSb nBn photodetectors have achieved specific detectivities of 1.7 × 1010 and 3.0 × 1010 Jones under 2-µm and 1.8-µm illumination, respectively. The dark current density at −0.5 V bias decreases from 3.1 × 10−3 A/cm2 at 300 K to 1.6 × 10−10 A/cm2 at 120 K, where the dominant dark current component is tunneling. The area-dependence of key performance parameters show that for mesa diameter ≤ 250 µm, surface defects assume a dominant role in the total noise.
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