Abstract

AlInAsSb photodetectors with high detectivity at 2 µm and 2.7 µm are reported. For 2-µm photodetection, figure-of-merit characteristics including specific detectivity, D^*, responsivity, dark current density, and differential-resistance area product of two photodetectors employing respectively Al_0.15InAsSb and Al_0.3InAsSb absorbers are compared and analyzed from 90 to 300 K. Peak D^* of 1.1×10¹² Jones for 2-µm photodetection was obtained at −0.1 V bias and 180 K and 4.9×10⁹ Jones for 2.7-µm photodetection at room temperature was obtained at −0.25 V bias. Close agreement was observed between dark current density and D^* for different mesa diameters, an important consideration for focal plane arrays. The bias for peak D^*, V_peak, was considerably reduced by using a proper doping concentration in the bottom contact layer. The measured V_peak, and the derived absorption coefficient and minority carrier diffusion length at different temperatures, provide improved understanding of the Al_xInAsSb material for nBn photodetectors.

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