Abstract

We developed a semiconductor regrowth scheme for InP photonic integrated circuits (PICs) with optical-gain sections. Unlike conventional semiconductor regrowth schemes, a limited area corresponding to a 200-μm waveguide of an original epitaxial wafer is replaced with an optical-gain material, which improves the flexibility of a PIC process design. In this paper, we describe the partial regrowth (PRG) procedure using a window regrowth mask that defines the regrowth area. A minimum window in terms of semiconductor quality assurance is determined by observing the micro-photoluminescence intensities of the replaced regions. We also show basic performances of optical semiconductor amplifiers (SOAs) obtained by the PRG including amplification of in-phase/quadrature modulation optical signals. Furthermore, practical InP PIC applications of the PRG are also depicted: an SOA-integrated Mach-Zehnder modulator and an electrooptically tunable laser with an arrayed gain.

InP-based photonic integrated circuit platform on SiC wafer

Mitsuru Takenaka and Shinichi Takagi
Opt. Express 25(24) 29993-30000 (2017)

Versatile butt-joint regrowth for dense photonic integration

Yi Wang, Jorn van Engelen, Rene van Veldhoven, Tjibbe de Vries, Victor Dolores-Cazadilla, Meint Smit, Kevin Williams, and Yuqing Jiao
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Regrowth-free high-gain InGaAsP/InP active-passive platform via ion implantation

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Improved fabrication process of low-loss and efficient polarization converters in InP-based photonic integrated circuits

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InP photonic circuits using generic integration [Invited]

K. A. Williams, E. A. J. M. Bente, D. Heiss, Y. Jiao, K. Ławniczuk, X. J. M. Leijtens, J. J. G. M. van der Tol, and M. K. Smit
Photon. Res. 3(5) B60-B68 (2015)