Abstract
Linearity of Si Mach-Zehnder Modulators (MZM) is characterized with a newly-proposed modeling technique which includes the influences of the transmission characteristics of traveling-wave (TW) electrodes and the electro-optic (EO) characteristics of PN junction phase shifters within Si MZMs. Using the technique, the third-order intermodulation distortion (IMD3) and the spurious-free dynamic range (SFDR) of a sample Si MZM device are determined, and their accuracy is verified with measurement results. In addition, the contributions of different nonlinear parameters to the nonlinearity of the sample Si MZM are identified.
PDF Article
Cited By
You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.
Contact your librarian or system administrator
or
Login to access Optica Member Subscription