Abstract
We demonstrate a novel ultra-fast photodiode structure that fundamentally relaxes the trade-offs between the speed, responsivity, and saturation power at sub-THz regime. Our device, with its 3 μm wide undercut collector profile, exhibits a DC responsivity (0.11 A/W) which is close in value to that reported for uni-traveling-carrier photodiodes (UTC-PDs) with similar sized active diameters (∼10 μm), but has a much larger 3-dB optical-to-electrical (O-E) bandwidth (220 GHz vs. around 75 GHz). This leads to much less optical power being required to deliver a close value of THz output power at the same operating frequency. Furthermore, the responsivity (0.11 vs. 0.1 A/W) and output power (0.4 vs. −2.4 dBm@165 GHz) are higher than those of reference devices without the undercut collector layer but with a miniaturized active diameter as small as 3 μm.
PDF Article
Cited By
You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.
Contact your librarian or system administrator
or
Login to access Optica Member Subscription