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  • Journal of Lightwave Technology
  • Vol. 42,
  • Issue 8,
  • pp. 2842-2847
  • (2024)

Wideband Type-II GaInAsSb/InP Uni-Traveling Carrier Photodiodes for Near 300 Gbps Communications

Rimjhim Chaudhary, Akshay M. Arabhavi, Laurenz Kulmer, Sara Hamzeloui, Martin Leich, Olivier Ostinelli, Juerg Leuthold, and Colombo R. Bolognesi

Open Access Open Access

Abstract

We report the wideband performance of uniform Type-II GaInAsSb/InP UTC-PDs for optical data communications near 300 Gbps. A wide bandwidth of $>$ 110 GHz is achieved for a device area of 50 $\mu$ m $^{2}$ . In signal transmission measurements, the present UTC-PDs show a low Bit-Error Rate (BER) and a high Signal-to-Noise Ratio (SNR) of more than 18 dB at data rates as high as 288 Gbps (96 GBd, PAM-8) without post-amplification electronics. The work demonstrates the suitability of GaInAsSb/InP UTC-PDs for optical data transmission at bit rates approaching 300 Gbps.

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