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Optica Publishing Group
  • Journal of Lightwave Technology
  • Vol. 42,
  • Issue 8,
  • pp. 2842-2847
  • (2024)

Wideband Type-II GaInAsSb/InP Uni-Traveling Carrier Photodiodes for Near 300 Gbps Communications

Open Access Open Access


We report the wideband performance of uniform Type-II GaInAsSb/InP UTC-PDs for optical data communications near 300 Gbps. A wide bandwidth of $>$ 110 GHz is achieved for a device area of 50 $\mu$ m $^{2}$ . In signal transmission measurements, the present UTC-PDs show a low Bit-Error Rate (BER) and a high Signal-to-Noise Ratio (SNR) of more than 18 dB at data rates as high as 288 Gbps (96 GBd, PAM-8) without post-amplification electronics. The work demonstrates the suitability of GaInAsSb/InP UTC-PDs for optical data transmission at bit rates approaching 300 Gbps.

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