V-groove-shaped silicon-on-insulator photopolarized activated modulator (SOIP<sup>2</sup>AM): a polarizing transistor

Jeremy Belhassen; Amos Frisch; Yuval Kapellner; Zeev Zalevsky; Avi Karsenty

doi:10.1364/JOSAA.37.000046

Journal of the Optical Society of America A
Vol. 37,
Issue 1,
pp. 46-55
(2020)
•https://doi.org/10.1364/JOSAA.37.000046

V-groove-shaped silicon-on-insulator photopolarized activated modulator (SOIP²AM): a polarizing transistor

Jeremy Belhassen, Amos Frisch, Yuval Kapellner, Zeev Zalevsky, and Avi Karsenty

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Jeremy Belhassen, Amos Frisch, Yuval Kapellner, Zeev Zalevsky, and Avi Karsenty, "V-groove-shaped silicon-on-insulator photopolarized activated modulator (SOIP²AM): a polarizing transistor," J. Opt. Soc. Am. A 37, 46-55 (2020)

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- Numerical Methods and Simulation
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About this Article
History
- Original Manuscript: July 12, 2019
- Revised Manuscript: November 2, 2019
- Manuscript Accepted: November 11, 2019
- Published: December 6, 2019

Abstract

In this paper, we present the design of a silicon optoelectronic device capable of speeding up processing capabilities. The data in this device are electronic, while the modulation control is optical. It can be used as a building block for the development of optical data processing by silicon-based processors based on typical microelectronics manufacturing processes. A V-groove-based structure fabricated as part of the device allows obtaining enhanced sensitivity to the polarization of the photonic control signal and thus allows obtaining a polarization-sensitive modulator.

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Parameter	Parameter Definitions	Values
Device parameters:
$W_{S i l i c o n}$	substrate width	20 µm
$L_{S i l i c o n}$	substrate length	28 µm
$H_{S i l i c o n}$	substrate height	10 µm
$L_{V - g r o o v e}$	V-groove length	2.78 µm
$H_{V - g r o o v e}$	V-groove height	3.94 µm
$t_{b o x}$	BOX thickness	150 nm
$t_{n} = t_{c h a n n e l}$	channel thickness	30 nm
$L_{c h a n n e l}$	channel length (source–drain)	300 nm
$W_{c h a n n e l}$	channel width	2 µm
$N_{D}$	n-doped channel donors (P) concentration	$\sim {1.10}^{17} {c m}^{- 3}$
$N_{A}$	p-doped substrate acceptors (B) concentration	$\sim {1.10}^{15} {c m}^{- 3}$
$α_{0}$	oxide coupling factor	$1. {3477 \cdot 10}^{9}$
$Φ_{0}$	oxide coupling voltage	−31.26 V
$η_{λ}$	quantum efficiency for Si at $λ = 550 n m$	0.98
$C_{S i} = C_{S i l i c o n} = ε_{S i} / t_{n}$	Si n-channel capacitance per united area	${3.45 \cdot 10}^{- 3} {F \cdot m}^{- 2}$
$C_{O x} = C_{O x i d e} == ε_{O x} / t_{O x}$	BOX capacitance per united area	${2.30 \cdot 10}^{- 4} {F . m}^{- 2}$
$C$	total capacitance per united area	${2.16 \cdot 10}^{- 4} {F \cdot m}^{- 2}$
Setup parameters used:
$V_{G}$	gate voltage	−1 V
$V_{S}$	source voltage	0 V
$V_{D}$	drain voltage	1 V
$P_{i n}$	laser power	10 mW
$Λ$	wavelength	550 nm, 940 nm
$A = l \times d$	studied area in the p-substrate	$2 µ m \times d$
$D$	control parameter of $A$	variable
$a_{V - g r o o v e}$	V-groove aperture	1 µm, 3 µm, 5 µm
Measured parameters:
$V_{F B}$	flatband voltage	1.77 V
$R$	Fresnel reflectance air, Si at $λ = 550 n m$	0.368
$V_{p h}^{min}$	minimal voltage induced to close channel	3.77 V
$N_{p h}^{min}$	minimal number of photons to close channel	3109
$d_{n} (x)$	thickness of FD zone	till 30 nm

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Journal of the Optical Society of America A