Abstract

We theoretically design and study a structure of graphene/intrinsic amorphous-silicon Schottky junction solar cell (Gr/i-a-Si_SJSC) with top core/shell quantum dots (CSQDs). A physical model incorporated with optoelectrical characteristics is developed to optimize the structure’s electrical performance by modifying the graphene work function, temperature, and CSQD radius. Simulations show that the conversion efficiency of Gr/i-a-Si_SJSC is increased by increasing the graphene work function, raising the core radius and shell thickness of CSQD and decreasing the temperature. The results reveal that with an appropriate choice of design parameter in an optimized structure, short-circuit current density of ${16.2}\;{{\rm mA/cm}^2}$, open-circuit voltage of 0.8 V, fill factor of 75.06%, and calculated power conversion efficiency of 9.93% are obtained.

© 2021 Optical Society of America

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