Self-powered photodetector based on a CsPbBr<sub>3</sub>/n-Si Schottky junction

Feng Hua; Xin Du; Zhenyu Huang; Yiting Gu; Jianfeng Wen; Fuchi Liu; Junxue Chen; Tao Tang

doi:10.1364/JOSAB.503296

Journal of the Optical Society of America B
Vol. 41,
Issue 1,
pp. 55-61
(2024)
•https://doi.org/10.1364/JOSAB.503296

Self-powered photodetector based on a CsPbBr₃/n-Si Schottky junction

Feng Hua, Xin Du, Zhenyu Huang, Yiting Gu, Jianfeng Wen, Fuchi Liu, Junxue Chen, and Tao Tang

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Feng Hua, Xin Du, Zhenyu Huang, Yiting Gu, Jianfeng Wen, Fuchi Liu, Junxue Chen, and Tao Tang, "Self-powered photodetector based on a CsPbBr₃/n-Si Schottky junction," J. Opt. Soc. Am. B 41, 55-61 (2024)

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Abstract

Self-powered photodetectors (SPPDs) are attracting considerable publicity due to their superiority over conventional photodetectors (PDs) in terms of high sensitivity, fast response, and no need for an external power supply. Halide perovskites are much anticipated in SPPDs for their unusual photoelectronic properties. This work developed a Schottky junction ${{\rm CsPbBr}_3}/{\rm n} \text{-} {\rm Si}$ SPPD by growing stable all-inorganic ${{\rm CsPbBr}_3}$ microcrystals on an n-Si substrate using a solution method. At zero bias, such Schottky SPPD has a very weak dark current (0.3 pA), a wide linear dynamic range (LDR, 110 dB), a sizeable on–off ratio (${\gt}{{10}^3}$), and high detectivity (${1.05} \times {{10}^{11}}\;{\rm Jones}$). Through the research of this project, it is expected to obtain a way to prepare Schottky photodiodes with high stability and self-driving capability.

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Supplementary Material (1)

Name	Description
Supplement 1	Supplemental document.

Data availability

Data underlying the results presented in this paper are not publicly available at this time but may be obtained from the authors upon reasonable request.

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Structure	Rise/Decay Time (ms)	$R$ [A/W] at V (V)	Detectivity [ $\times 10^{12}$ Jones]	On–Off Ratio	LDR (dB)	Refs.
$A u / {C s P b B r}_{3} / A u$	55/20	1.74 at 5	2.41	$2.72 \times 10^{4}$	—	[43]
$A u / {C s P b B r}_{3} / P t$	230/60	0.028 at 6	0.17	$10^{5}$	—	[24]
$F T O / {C s P b B r}_{3} : Z n O / A g$	409/17.9	0.0115 at 0	—	12.86	—	[44]
$I n / {S n O}_{2} / {C s P b B r}_{3} / I n$	30/1940	0.01	0.26	$10^{4}$	—	[45]
$A l / S i / {S i O}_{2} / {M A P b I}_{3} / P t$	0.25/0.620	—	0.09	$10^{5}$	—	[46]
$I T O / Z n O / C d S / {C s P b B r}_{3} / A u$	300/250	0.086 at 0	0.62	$10^{6}$	—	[47]
$F T O / M g O / Z n O / {M A P b I}_{3} / C$	0.63/1.6	0.314 at 0	1.5	$> 10^{4}$	87.7	[48]
$I T O / {S n O}_{2} / {C s P b B r}_{3} / {M o O}_{3} / A u$	0.1/0.16	0.092 at 0	0.744	$> 10^{4}$	108	[40]
$C d S / {C s P b B r}_{3}$	1.5/14.9	0.025 at 0	1.09	$10^{3}$	—	[49]
${C s P b B r}_{3} / C u I / A g$	0.04/2.96	0.0014 at 0	0.06	$10^{3}$	—	[50]
$A u / {C s P b B r}_{3} / n - S i$	190/291	0.171 at 0	0.105	$> 10^{3}$	110	Our device

Abstract

Supplementary Material (1)

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Journal of the Optical Society of America B