Abstract

This paper discusses the dynamics of photoluminescence excited in CdTe when a pulsed(τ=80ns) ruby laser acts on it, modifying a submicron surface layer. The dependences of the maximum photoluminescence intensity on the irradiation-energy density E are obtained for single, double, and triple laser pulses. The dependences thus established are explained by the influence of competing factors: the increase of the photoexcitation level with increasing E, and the temperature quenching of the photoluminescence. A photoluminescence-increase effect for energy densities above the surface-melting threshold of the semiconductor is detected.

© 2008 Optical Society of America

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