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Structural modification of glassy chalcogenide semiconductors under the action of femtosecond laser radiation

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Abstract

This paper discusses the structural changes induced by laser radiation with wavelength λ=800nm, pulse width τ=100fs, and repetition rate f=80MHz in bulk samples of glassy semiconductors. As a result of this work, waveguide structures were created in As<sub>2</sub>S<sub>3</sub> and 0.15(Ga<sub>2</sub>S<sub>3</sub>)-0.85(GeS<sub>2</sub>):Er<sup>3+</sup>[C(Er<sup>3+</sup>)=1.2at%] glasses under various conditions of laser action (the recording method, the speed and number of scans). The structural changes induced by femtosecond laser radiation in a sample of As<sub>2</sub>S<sub>3</sub> glass were investigated by Raman scattering.

© 2009 Optical Society of America

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