Abstract
Infrared n-p-photodiode photodetectors based on a hybrid assembly of photosensitive elements of format 288×4 with a 56×43-μm step, made from mercury-cadmium telluride heteroepitaxial structures obtained by molecular-beam epitaxy, have been developed, fabricated, and investigated for the 8-12-μm spectral range, along with silicon multiplexers with bidirectional scanning and internal time delay and storage of the signal. The 288×4-format linear photodetector has the following mean values of voltage sensitivity, detectivity, and NETD at the maximum sensitivity: (1-3)×10<sup>8</sup>V/W, (1.5-2.0)×10<sup>11</sup>cmHz<sup>1/2</sup>W<sup>−1</sup>, and 9mK, respectively. There are no defective channels.
© 2009 Optical Society of America
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