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Characterization of lasing regimes of 1.3 µm vertical-cavity surface-emitting lasers based on a short-period InGaAs/InGaAlAs superlattice

A. A. Petrenko, S. S. Rochas, L. Ya. Karachinskii, A. V. Babichev, I. I. Novikov, A. G. Gladyshev, E. S. Kolodeznyi, P. E. Kopytov, V. E. Bugrov, S. A. Blochin, A. A. Blochin, K. O. Voropaev, and A. Yu. Egorov

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Abstract

Lasing regimes of 1.3 µm vertical-cavity surface-emitting lasers (VCSELs) based on a short-period In0.57Ga0.43As/In0.53Ga0.27Al0.2As superlattice and two Al0.9Ga0.1As/GaAs distributed Bragg reflectors on a GaAs substrate were characterized in this study. VCSEL crystals were mounted on crystal holders with a radio frequency SMA connector and an optical fiber with ferrule connector (FC) for investigation. Current–voltage and output-power–current characteristics, optical and radio frequency spectra, and polarization stability of laser emission were experimentally investigated in the pump current range of 0–14 mA. The threshold current of the studied VCSELs was established to be 1.7 mA. The maximum output optical power at the output of the optical fiber of the VCSEL based on a short-period In0.57Ga0.43As/In0.53Ga0.27Al0.2As superlattice and the current-induced emission wavelength shift were demonstrated to be 1.34 mW and 0.5 nm/mA, respectively. The small-signal modulation frequency was in the GHz range. The investigated VCSELs can be used in the development of radio photonic devices for telecommunications. Further improvement of the static and dynamic properties of VCSELs is possible by optimizing the design of the short-period superlattice and buried tunnel junction.

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