B. U. Ye, B. J. Kim, Y. H. Song, J. H. Son, H. K. Yu, M. H. Kim, J. L. Lee, and J. M. Baik, “Enhancing light emission of nanostructured vertical light-emitting diodes by minimizing total internal reflection,” Adv. Funct. Mater. 22(3), 632–639 (2012).
[Crossref]

J. H. Son, J. U. Kim, Y. H. Song, B. J. Kim, C. J. Ryu, and J. L. Lee, “Design rule of nanostructures in light-emitting diodes for complete elimination of total internal reflection,” Adv. Mater. 24(17), 2259–2262 (2012).
[Crossref] [PubMed]

C. C. Yang, C. F. Lin, K. T. Chen, R. H. Jiang, and C. M. Lin, “Direct-grown air-void structure in the InGaN light-emitting diodes,” IEEE Elec. Dev. Lett. 33(12), 1738–1740 (2012).
[Crossref]

Y. R. Wu, R. Shivaraman, K. C. Wang, and J. S. Speck, “Analyzing the physical properties of InGaN multiple quantum well light emitting diodes from nano scale structure,” Appl. Phys. Lett. 101(8), 083505 (2012).
[Crossref]

S. De, A. Layek, A. Raja, A. Kadir, M. R. Gokhale, A. Bhattacharya, S. Dhar, and A. Chowdhury, “Two distinct origins of highly localized luminescent centers within InGaN/GaN quantum-well light-emitting diodes,” Adv. Funct. Mater. 21(20), 3828–3835 (2011).
[Crossref]

C. Y. Cho, S. E. Kang, K. S. Kim, S. J. Lee, Y. S. Choi, S. H. Han, G. Y. Jung, and S. J. Park, “Enhanced light extraction in light-emitting diodes with photonic crystal structure selectively grown on p-GaN,” Appl. Phys. Lett. 96(18), 181110 (2010).
[Crossref]

Y. Zhang, S. W. Ryu, C. Yerino, B. Leung, Q. Sun, Q. Song, H. Cao, and J. Han, “A conductivity-based selective etching for next generation GaN devices,” Phys. Stat. Solidi B 247(7), 1713–1716 (2010).
[Crossref]

J. Hader, J. V. Moloney, and S. W. Koch, “Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based diodes,” Appl. Phys. Lett. 96(22), 221106 (2010).
[Crossref]

M. Y. Ghannam, A. S. Alomar, J. Poortmans, and R. P. Mertens, “Interpretation of macropore shape transformation in crystalline silicon upon high temperature processing,” J. Appl. Phys. 108(7), 074902 (2010).
[Crossref]

K. S. Kim, S. M. Kim, H. Jeong, M. S. Jeong, and G. Y. Jung, “Enhancement of light extraction through the wave-guiding effect of ZnO sub-microrods in InGaN blue light-emitting diodes,” Adv. Funct. Mater. 20(7), 1076–1082 (2010).
[Crossref]

M. A. Moram, R. A. Oliver, M. J. Kappers, and C. J. Humphreys, “The spatial distribution of threading dislocations in gallium nitride films,” Adv. Mater. 21(38–39), 3941–3944 (2009).
[Crossref]

K. Sudoh, H. Iwasaki, R. Hiruta, H. Kuribayashi, and R. Shimizu, “Void shape evolution and formation of silicon-on-nothing structures during hydrogen annealing of hole arrays on Si(001),” J. Appl. Phys. 105(8), 083536 (2009).
[Crossref]

S. M. de Sousa Pereira, M. A. Martins, T. Trindade, I. M. Watson, D. Zhu, and C. J. Humphreys, “Controlled integration of nanocrystals in inverted hexagonal nano-pits at the surface of light-emitting heterostructures,” Adv. Mater. 20(5), 1038–1043 (2008).
[Crossref]

M. H. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. Piprek, and Y. J. Park, “Origin of efficiency droop in GaN-based light-emitting diodes,” Appl. Phys. Lett. 91(18), 183507 (2007).
[Crossref]

C. Netzel, H. Bremers, L. Hoffmann, D. Fuhrmann, U. Rossow, and A. Hangleiter, “Emission and recombination characteristics of Ga1−xInxN/GaN quantum well structures with nonradiative recombination suppression by V-shaped pits,” Phys. Rev. B 76(15), 155322 (2007).
[Crossref]

H. Hartono, C. B. Soh, S. Y. Chow, S. J. Chua, and E. A. Fitzgerald, “Reduction of threading dislocation density in GaN grown on strain relaxed nanoporous GaN template,” Appl. Phys. Lett. 90(17), 171917 (2007).
[Crossref]

C. B. Soh, H. Hartono, S. Y. Chow, S. J. Chua, and E. A. Fitzgerald, “Dislocation annihilation in regrown GaN on nanoporous GaN template with optimization of buffer layer growth,” Appl. Phys. Lett. 90(5), 053112 (2007).
[Crossref]

B. Li, Y. Feng, and Y. Liu, “An electrical model of InGaN based high power light emitting diodes with self-heating effect,” proc. SPIE 6669, 66691 (2007).
[Crossref]

J. Shakya, K. Knabe, K. H. Kim, J. Li, J. Y. Lin, and H. X. Jiang, “Polarization of III-nitride blue and ultraviolet light-emitting diodes,” Appl. Phys. Lett. 86(9), 091107 (2005).
[Crossref]

T. Sato, I. Mizushima, S. Taniguchi, K. Takenaka, S. Shimonishi, H. Hayashi, M. Hatano, K. Sugihara, and Y. Tsunashima, “Fabrication of silicon-on-nothing structure by substrate engineering using the empty-space-in-silicon formation technique,” Jpn. J. Appl. Phys. 43(1), 12–18 (2004).
[Crossref]

S. Watanabe, N. Yamada, M. Nagashima, Y. Ueki, C. Sasaki, Y. Yamada, T. Taguchi, K. Tadatomo, H. Okagawa, and H. Kudo, “Internal quantum efficiency of highly-efficient InxGa1−xN-based near-ultraviolet light-emitting diodes,” Appl. Phys. Lett. 83(24), 4906 (2003).
[Crossref]

J. S. Speck and S. J. Rosner, “The role of threading dislocations in the physical properties of GaN and its alloys,” Physica B 273, 24–32 (1999).
[Crossref]

S. Nakamura, “The roles of structural imperfections in InGaN-based blue light-emitting diodes and laser diodes,” Science 14(281), 956–961 (1998).
[Crossref] [PubMed]

S. F. Chichibu, A. C. Abare, M. S. Minsky, S. Keller, S. B. Fleischer, J. E. Bowers, E. Hu, U. K. Mishra, L. A. Coldren, S. P. DenBaars, and T. Sota, “Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures,” Appl. Phys. Lett. 73(14), 2006 (1998).
[Crossref]

F. Bernardini, V. Fiorentini, and D. Vanderbilt, “Spontaneous polarization and piezoelectric constants of III-V nitrides,” Phys. Rev. B 56(16), 10024–10027 (1997).
[Crossref]

P. G. Eliseev, P. Perlin, L. Lee, and M. Osinski, “Blue temperature-induced shift and band-tail emission in InGaN-based light sources,” Appl. Phys. Lett. 71(5), 569 (1997).
[Crossref]

C. Kisielowski, J. Krüger, S. Ruvimov, T. Suski, J. W. Ager, E. Jones, Z. Liliental-Weber, M. Rubin, E. R. Weber, M. D. Bremser, and R. F. Davis, “Strain-related phenomena in GaN thin films,” Phys. Rev. B Condens. Matter 54(24), 17745–17753 (1996).
[Crossref] [PubMed]

D. Bimberg, M. Sondergeld, and E. Grobe, “Thermal dissociation of excitons bounds to neutral acceptors in high-purity GaAs,” Phys. Rev. B 4(10), 3451–3455 (1971).
[Crossref]

S. F. Chichibu, A. C. Abare, M. S. Minsky, S. Keller, S. B. Fleischer, J. E. Bowers, E. Hu, U. K. Mishra, L. A. Coldren, S. P. DenBaars, and T. Sota, “Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures,” Appl. Phys. Lett. 73(14), 2006 (1998).
[Crossref]

C. Kisielowski, J. Krüger, S. Ruvimov, T. Suski, J. W. Ager, E. Jones, Z. Liliental-Weber, M. Rubin, E. R. Weber, M. D. Bremser, and R. F. Davis, “Strain-related phenomena in GaN thin films,” Phys. Rev. B Condens. Matter 54(24), 17745–17753 (1996).
[Crossref] [PubMed]

M. Y. Ghannam, A. S. Alomar, J. Poortmans, and R. P. Mertens, “Interpretation of macropore shape transformation in crystalline silicon upon high temperature processing,” J. Appl. Phys. 108(7), 074902 (2010).
[Crossref]

B. U. Ye, B. J. Kim, Y. H. Song, J. H. Son, H. K. Yu, M. H. Kim, J. L. Lee, and J. M. Baik, “Enhancing light emission of nanostructured vertical light-emitting diodes by minimizing total internal reflection,” Adv. Funct. Mater. 22(3), 632–639 (2012).
[Crossref]

F. Bernardini, V. Fiorentini, and D. Vanderbilt, “Spontaneous polarization and piezoelectric constants of III-V nitrides,” Phys. Rev. B 56(16), 10024–10027 (1997).
[Crossref]

S. De, A. Layek, A. Raja, A. Kadir, M. R. Gokhale, A. Bhattacharya, S. Dhar, and A. Chowdhury, “Two distinct origins of highly localized luminescent centers within InGaN/GaN quantum-well light-emitting diodes,” Adv. Funct. Mater. 21(20), 3828–3835 (2011).
[Crossref]

D. Bimberg, M. Sondergeld, and E. Grobe, “Thermal dissociation of excitons bounds to neutral acceptors in high-purity GaAs,” Phys. Rev. B 4(10), 3451–3455 (1971).
[Crossref]

S. F. Chichibu, A. C. Abare, M. S. Minsky, S. Keller, S. B. Fleischer, J. E. Bowers, E. Hu, U. K. Mishra, L. A. Coldren, S. P. DenBaars, and T. Sota, “Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures,” Appl. Phys. Lett. 73(14), 2006 (1998).
[Crossref]

C. Netzel, H. Bremers, L. Hoffmann, D. Fuhrmann, U. Rossow, and A. Hangleiter, “Emission and recombination characteristics of Ga1−xInxN/GaN quantum well structures with nonradiative recombination suppression by V-shaped pits,” Phys. Rev. B 76(15), 155322 (2007).
[Crossref]

C. Kisielowski, J. Krüger, S. Ruvimov, T. Suski, J. W. Ager, E. Jones, Z. Liliental-Weber, M. Rubin, E. R. Weber, M. D. Bremser, and R. F. Davis, “Strain-related phenomena in GaN thin films,” Phys. Rev. B Condens. Matter 54(24), 17745–17753 (1996).
[Crossref] [PubMed]

Y. Zhang, S. W. Ryu, C. Yerino, B. Leung, Q. Sun, Q. Song, H. Cao, and J. Han, “A conductivity-based selective etching for next generation GaN devices,” Phys. Stat. Solidi B 247(7), 1713–1716 (2010).
[Crossref]

C. C. Yang, C. F. Lin, K. T. Chen, R. H. Jiang, and C. M. Lin, “Direct-grown air-void structure in the InGaN light-emitting diodes,” IEEE Elec. Dev. Lett. 33(12), 1738–1740 (2012).
[Crossref]

S. F. Chichibu, A. C. Abare, M. S. Minsky, S. Keller, S. B. Fleischer, J. E. Bowers, E. Hu, U. K. Mishra, L. A. Coldren, S. P. DenBaars, and T. Sota, “Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures,” Appl. Phys. Lett. 73(14), 2006 (1998).
[Crossref]

C. Y. Cho, S. E. Kang, K. S. Kim, S. J. Lee, Y. S. Choi, S. H. Han, G. Y. Jung, and S. J. Park, “Enhanced light extraction in light-emitting diodes with photonic crystal structure selectively grown on p-GaN,” Appl. Phys. Lett. 96(18), 181110 (2010).
[Crossref]

C. Y. Cho, S. E. Kang, K. S. Kim, S. J. Lee, Y. S. Choi, S. H. Han, G. Y. Jung, and S. J. Park, “Enhanced light extraction in light-emitting diodes with photonic crystal structure selectively grown on p-GaN,” Appl. Phys. Lett. 96(18), 181110 (2010).
[Crossref]

H. Hartono, C. B. Soh, S. Y. Chow, S. J. Chua, and E. A. Fitzgerald, “Reduction of threading dislocation density in GaN grown on strain relaxed nanoporous GaN template,” Appl. Phys. Lett. 90(17), 171917 (2007).
[Crossref]

C. B. Soh, H. Hartono, S. Y. Chow, S. J. Chua, and E. A. Fitzgerald, “Dislocation annihilation in regrown GaN on nanoporous GaN template with optimization of buffer layer growth,” Appl. Phys. Lett. 90(5), 053112 (2007).
[Crossref]

S. De, A. Layek, A. Raja, A. Kadir, M. R. Gokhale, A. Bhattacharya, S. Dhar, and A. Chowdhury, “Two distinct origins of highly localized luminescent centers within InGaN/GaN quantum-well light-emitting diodes,” Adv. Funct. Mater. 21(20), 3828–3835 (2011).
[Crossref]

C. B. Soh, H. Hartono, S. Y. Chow, S. J. Chua, and E. A. Fitzgerald, “Dislocation annihilation in regrown GaN on nanoporous GaN template with optimization of buffer layer growth,” Appl. Phys. Lett. 90(5), 053112 (2007).
[Crossref]

H. Hartono, C. B. Soh, S. Y. Chow, S. J. Chua, and E. A. Fitzgerald, “Reduction of threading dislocation density in GaN grown on strain relaxed nanoporous GaN template,” Appl. Phys. Lett. 90(17), 171917 (2007).
[Crossref]

S. F. Chichibu, A. C. Abare, M. S. Minsky, S. Keller, S. B. Fleischer, J. E. Bowers, E. Hu, U. K. Mishra, L. A. Coldren, S. P. DenBaars, and T. Sota, “Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures,” Appl. Phys. Lett. 73(14), 2006 (1998).
[Crossref]

M. H. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. Piprek, and Y. J. Park, “Origin of efficiency droop in GaN-based light-emitting diodes,” Appl. Phys. Lett. 91(18), 183507 (2007).
[Crossref]

C. Kisielowski, J. Krüger, S. Ruvimov, T. Suski, J. W. Ager, E. Jones, Z. Liliental-Weber, M. Rubin, E. R. Weber, M. D. Bremser, and R. F. Davis, “Strain-related phenomena in GaN thin films,” Phys. Rev. B Condens. Matter 54(24), 17745–17753 (1996).
[Crossref] [PubMed]

S. De, A. Layek, A. Raja, A. Kadir, M. R. Gokhale, A. Bhattacharya, S. Dhar, and A. Chowdhury, “Two distinct origins of highly localized luminescent centers within InGaN/GaN quantum-well light-emitting diodes,” Adv. Funct. Mater. 21(20), 3828–3835 (2011).
[Crossref]

S. M. de Sousa Pereira, M. A. Martins, T. Trindade, I. M. Watson, D. Zhu, and C. J. Humphreys, “Controlled integration of nanocrystals in inverted hexagonal nano-pits at the surface of light-emitting heterostructures,” Adv. Mater. 20(5), 1038–1043 (2008).
[Crossref]

S. F. Chichibu, A. C. Abare, M. S. Minsky, S. Keller, S. B. Fleischer, J. E. Bowers, E. Hu, U. K. Mishra, L. A. Coldren, S. P. DenBaars, and T. Sota, “Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures,” Appl. Phys. Lett. 73(14), 2006 (1998).
[Crossref]

S. De, A. Layek, A. Raja, A. Kadir, M. R. Gokhale, A. Bhattacharya, S. Dhar, and A. Chowdhury, “Two distinct origins of highly localized luminescent centers within InGaN/GaN quantum-well light-emitting diodes,” Adv. Funct. Mater. 21(20), 3828–3835 (2011).
[Crossref]

P. G. Eliseev, P. Perlin, L. Lee, and M. Osinski, “Blue temperature-induced shift and band-tail emission in InGaN-based light sources,” Appl. Phys. Lett. 71(5), 569 (1997).
[Crossref]

B. Li, Y. Feng, and Y. Liu, “An electrical model of InGaN based high power light emitting diodes with self-heating effect,” proc. SPIE 6669, 66691 (2007).
[Crossref]

F. Bernardini, V. Fiorentini, and D. Vanderbilt, “Spontaneous polarization and piezoelectric constants of III-V nitrides,” Phys. Rev. B 56(16), 10024–10027 (1997).
[Crossref]

H. Hartono, C. B. Soh, S. Y. Chow, S. J. Chua, and E. A. Fitzgerald, “Reduction of threading dislocation density in GaN grown on strain relaxed nanoporous GaN template,” Appl. Phys. Lett. 90(17), 171917 (2007).
[Crossref]

C. B. Soh, H. Hartono, S. Y. Chow, S. J. Chua, and E. A. Fitzgerald, “Dislocation annihilation in regrown GaN on nanoporous GaN template with optimization of buffer layer growth,” Appl. Phys. Lett. 90(5), 053112 (2007).
[Crossref]

S. F. Chichibu, A. C. Abare, M. S. Minsky, S. Keller, S. B. Fleischer, J. E. Bowers, E. Hu, U. K. Mishra, L. A. Coldren, S. P. DenBaars, and T. Sota, “Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures,” Appl. Phys. Lett. 73(14), 2006 (1998).
[Crossref]

C. Netzel, H. Bremers, L. Hoffmann, D. Fuhrmann, U. Rossow, and A. Hangleiter, “Emission and recombination characteristics of Ga1−xInxN/GaN quantum well structures with nonradiative recombination suppression by V-shaped pits,” Phys. Rev. B 76(15), 155322 (2007).
[Crossref]

M. Y. Ghannam, A. S. Alomar, J. Poortmans, and R. P. Mertens, “Interpretation of macropore shape transformation in crystalline silicon upon high temperature processing,” J. Appl. Phys. 108(7), 074902 (2010).
[Crossref]

S. De, A. Layek, A. Raja, A. Kadir, M. R. Gokhale, A. Bhattacharya, S. Dhar, and A. Chowdhury, “Two distinct origins of highly localized luminescent centers within InGaN/GaN quantum-well light-emitting diodes,” Adv. Funct. Mater. 21(20), 3828–3835 (2011).
[Crossref]

D. Bimberg, M. Sondergeld, and E. Grobe, “Thermal dissociation of excitons bounds to neutral acceptors in high-purity GaAs,” Phys. Rev. B 4(10), 3451–3455 (1971).
[Crossref]

J. Hader, J. V. Moloney, and S. W. Koch, “Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based diodes,” Appl. Phys. Lett. 96(22), 221106 (2010).
[Crossref]

Y. Zhang, S. W. Ryu, C. Yerino, B. Leung, Q. Sun, Q. Song, H. Cao, and J. Han, “A conductivity-based selective etching for next generation GaN devices,” Phys. Stat. Solidi B 247(7), 1713–1716 (2010).
[Crossref]

C. Y. Cho, S. E. Kang, K. S. Kim, S. J. Lee, Y. S. Choi, S. H. Han, G. Y. Jung, and S. J. Park, “Enhanced light extraction in light-emitting diodes with photonic crystal structure selectively grown on p-GaN,” Appl. Phys. Lett. 96(18), 181110 (2010).
[Crossref]

C. Netzel, H. Bremers, L. Hoffmann, D. Fuhrmann, U. Rossow, and A. Hangleiter, “Emission and recombination characteristics of Ga1−xInxN/GaN quantum well structures with nonradiative recombination suppression by V-shaped pits,” Phys. Rev. B 76(15), 155322 (2007).
[Crossref]

H. Hartono, C. B. Soh, S. Y. Chow, S. J. Chua, and E. A. Fitzgerald, “Reduction of threading dislocation density in GaN grown on strain relaxed nanoporous GaN template,” Appl. Phys. Lett. 90(17), 171917 (2007).
[Crossref]

C. B. Soh, H. Hartono, S. Y. Chow, S. J. Chua, and E. A. Fitzgerald, “Dislocation annihilation in regrown GaN on nanoporous GaN template with optimization of buffer layer growth,” Appl. Phys. Lett. 90(5), 053112 (2007).
[Crossref]

T. Sato, I. Mizushima, S. Taniguchi, K. Takenaka, S. Shimonishi, H. Hayashi, M. Hatano, K. Sugihara, and Y. Tsunashima, “Fabrication of silicon-on-nothing structure by substrate engineering using the empty-space-in-silicon formation technique,” Jpn. J. Appl. Phys. 43(1), 12–18 (2004).
[Crossref]

T. Sato, I. Mizushima, S. Taniguchi, K. Takenaka, S. Shimonishi, H. Hayashi, M. Hatano, K. Sugihara, and Y. Tsunashima, “Fabrication of silicon-on-nothing structure by substrate engineering using the empty-space-in-silicon formation technique,” Jpn. J. Appl. Phys. 43(1), 12–18 (2004).
[Crossref]

K. Sudoh, H. Iwasaki, R. Hiruta, H. Kuribayashi, and R. Shimizu, “Void shape evolution and formation of silicon-on-nothing structures during hydrogen annealing of hole arrays on Si(001),” J. Appl. Phys. 105(8), 083536 (2009).
[Crossref]

C. Netzel, H. Bremers, L. Hoffmann, D. Fuhrmann, U. Rossow, and A. Hangleiter, “Emission and recombination characteristics of Ga1−xInxN/GaN quantum well structures with nonradiative recombination suppression by V-shaped pits,” Phys. Rev. B 76(15), 155322 (2007).
[Crossref]

S. F. Chichibu, A. C. Abare, M. S. Minsky, S. Keller, S. B. Fleischer, J. E. Bowers, E. Hu, U. K. Mishra, L. A. Coldren, S. P. DenBaars, and T. Sota, “Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures,” Appl. Phys. Lett. 73(14), 2006 (1998).
[Crossref]

M. A. Moram, R. A. Oliver, M. J. Kappers, and C. J. Humphreys, “The spatial distribution of threading dislocations in gallium nitride films,” Adv. Mater. 21(38–39), 3941–3944 (2009).
[Crossref]

S. M. de Sousa Pereira, M. A. Martins, T. Trindade, I. M. Watson, D. Zhu, and C. J. Humphreys, “Controlled integration of nanocrystals in inverted hexagonal nano-pits at the surface of light-emitting heterostructures,” Adv. Mater. 20(5), 1038–1043 (2008).
[Crossref]

K. Sudoh, H. Iwasaki, R. Hiruta, H. Kuribayashi, and R. Shimizu, “Void shape evolution and formation of silicon-on-nothing structures during hydrogen annealing of hole arrays on Si(001),” J. Appl. Phys. 105(8), 083536 (2009).
[Crossref]

K. S. Kim, S. M. Kim, H. Jeong, M. S. Jeong, and G. Y. Jung, “Enhancement of light extraction through the wave-guiding effect of ZnO sub-microrods in InGaN blue light-emitting diodes,” Adv. Funct. Mater. 20(7), 1076–1082 (2010).
[Crossref]

K. S. Kim, S. M. Kim, H. Jeong, M. S. Jeong, and G. Y. Jung, “Enhancement of light extraction through the wave-guiding effect of ZnO sub-microrods in InGaN blue light-emitting diodes,” Adv. Funct. Mater. 20(7), 1076–1082 (2010).
[Crossref]

J. Shakya, K. Knabe, K. H. Kim, J. Li, J. Y. Lin, and H. X. Jiang, “Polarization of III-nitride blue and ultraviolet light-emitting diodes,” Appl. Phys. Lett. 86(9), 091107 (2005).
[Crossref]

C. C. Yang, C. F. Lin, K. T. Chen, R. H. Jiang, and C. M. Lin, “Direct-grown air-void structure in the InGaN light-emitting diodes,” IEEE Elec. Dev. Lett. 33(12), 1738–1740 (2012).
[Crossref]

C. Kisielowski, J. Krüger, S. Ruvimov, T. Suski, J. W. Ager, E. Jones, Z. Liliental-Weber, M. Rubin, E. R. Weber, M. D. Bremser, and R. F. Davis, “Strain-related phenomena in GaN thin films,” Phys. Rev. B Condens. Matter 54(24), 17745–17753 (1996).
[Crossref] [PubMed]

C. Y. Cho, S. E. Kang, K. S. Kim, S. J. Lee, Y. S. Choi, S. H. Han, G. Y. Jung, and S. J. Park, “Enhanced light extraction in light-emitting diodes with photonic crystal structure selectively grown on p-GaN,” Appl. Phys. Lett. 96(18), 181110 (2010).
[Crossref]

K. S. Kim, S. M. Kim, H. Jeong, M. S. Jeong, and G. Y. Jung, “Enhancement of light extraction through the wave-guiding effect of ZnO sub-microrods in InGaN blue light-emitting diodes,” Adv. Funct. Mater. 20(7), 1076–1082 (2010).
[Crossref]

S. De, A. Layek, A. Raja, A. Kadir, M. R. Gokhale, A. Bhattacharya, S. Dhar, and A. Chowdhury, “Two distinct origins of highly localized luminescent centers within InGaN/GaN quantum-well light-emitting diodes,” Adv. Funct. Mater. 21(20), 3828–3835 (2011).
[Crossref]

C. Y. Cho, S. E. Kang, K. S. Kim, S. J. Lee, Y. S. Choi, S. H. Han, G. Y. Jung, and S. J. Park, “Enhanced light extraction in light-emitting diodes with photonic crystal structure selectively grown on p-GaN,” Appl. Phys. Lett. 96(18), 181110 (2010).
[Crossref]

M. A. Moram, R. A. Oliver, M. J. Kappers, and C. J. Humphreys, “The spatial distribution of threading dislocations in gallium nitride films,” Adv. Mater. 21(38–39), 3941–3944 (2009).
[Crossref]

S. F. Chichibu, A. C. Abare, M. S. Minsky, S. Keller, S. B. Fleischer, J. E. Bowers, E. Hu, U. K. Mishra, L. A. Coldren, S. P. DenBaars, and T. Sota, “Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures,” Appl. Phys. Lett. 73(14), 2006 (1998).
[Crossref]

J. H. Son, J. U. Kim, Y. H. Song, B. J. Kim, C. J. Ryu, and J. L. Lee, “Design rule of nanostructures in light-emitting diodes for complete elimination of total internal reflection,” Adv. Mater. 24(17), 2259–2262 (2012).
[Crossref] [PubMed]

B. U. Ye, B. J. Kim, Y. H. Song, J. H. Son, H. K. Yu, M. H. Kim, J. L. Lee, and J. M. Baik, “Enhancing light emission of nanostructured vertical light-emitting diodes by minimizing total internal reflection,” Adv. Funct. Mater. 22(3), 632–639 (2012).
[Crossref]

M. H. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. Piprek, and Y. J. Park, “Origin of efficiency droop in GaN-based light-emitting diodes,” Appl. Phys. Lett. 91(18), 183507 (2007).
[Crossref]

J. H. Son, J. U. Kim, Y. H. Song, B. J. Kim, C. J. Ryu, and J. L. Lee, “Design rule of nanostructures in light-emitting diodes for complete elimination of total internal reflection,” Adv. Mater. 24(17), 2259–2262 (2012).
[Crossref] [PubMed]

J. Shakya, K. Knabe, K. H. Kim, J. Li, J. Y. Lin, and H. X. Jiang, “Polarization of III-nitride blue and ultraviolet light-emitting diodes,” Appl. Phys. Lett. 86(9), 091107 (2005).
[Crossref]

C. Y. Cho, S. E. Kang, K. S. Kim, S. J. Lee, Y. S. Choi, S. H. Han, G. Y. Jung, and S. J. Park, “Enhanced light extraction in light-emitting diodes with photonic crystal structure selectively grown on p-GaN,” Appl. Phys. Lett. 96(18), 181110 (2010).
[Crossref]

K. S. Kim, S. M. Kim, H. Jeong, M. S. Jeong, and G. Y. Jung, “Enhancement of light extraction through the wave-guiding effect of ZnO sub-microrods in InGaN blue light-emitting diodes,” Adv. Funct. Mater. 20(7), 1076–1082 (2010).
[Crossref]

B. U. Ye, B. J. Kim, Y. H. Song, J. H. Son, H. K. Yu, M. H. Kim, J. L. Lee, and J. M. Baik, “Enhancing light emission of nanostructured vertical light-emitting diodes by minimizing total internal reflection,” Adv. Funct. Mater. 22(3), 632–639 (2012).
[Crossref]

M. H. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. Piprek, and Y. J. Park, “Origin of efficiency droop in GaN-based light-emitting diodes,” Appl. Phys. Lett. 91(18), 183507 (2007).
[Crossref]

K. S. Kim, S. M. Kim, H. Jeong, M. S. Jeong, and G. Y. Jung, “Enhancement of light extraction through the wave-guiding effect of ZnO sub-microrods in InGaN blue light-emitting diodes,” Adv. Funct. Mater. 20(7), 1076–1082 (2010).
[Crossref]

C. Kisielowski, J. Krüger, S. Ruvimov, T. Suski, J. W. Ager, E. Jones, Z. Liliental-Weber, M. Rubin, E. R. Weber, M. D. Bremser, and R. F. Davis, “Strain-related phenomena in GaN thin films,” Phys. Rev. B Condens. Matter 54(24), 17745–17753 (1996).
[Crossref] [PubMed]

J. Shakya, K. Knabe, K. H. Kim, J. Li, J. Y. Lin, and H. X. Jiang, “Polarization of III-nitride blue and ultraviolet light-emitting diodes,” Appl. Phys. Lett. 86(9), 091107 (2005).
[Crossref]

J. Hader, J. V. Moloney, and S. W. Koch, “Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based diodes,” Appl. Phys. Lett. 96(22), 221106 (2010).
[Crossref]

C. Kisielowski, J. Krüger, S. Ruvimov, T. Suski, J. W. Ager, E. Jones, Z. Liliental-Weber, M. Rubin, E. R. Weber, M. D. Bremser, and R. F. Davis, “Strain-related phenomena in GaN thin films,” Phys. Rev. B Condens. Matter 54(24), 17745–17753 (1996).
[Crossref] [PubMed]

S. Watanabe, N. Yamada, M. Nagashima, Y. Ueki, C. Sasaki, Y. Yamada, T. Taguchi, K. Tadatomo, H. Okagawa, and H. Kudo, “Internal quantum efficiency of highly-efficient InxGa1−xN-based near-ultraviolet light-emitting diodes,” Appl. Phys. Lett. 83(24), 4906 (2003).
[Crossref]

K. Sudoh, H. Iwasaki, R. Hiruta, H. Kuribayashi, and R. Shimizu, “Void shape evolution and formation of silicon-on-nothing structures during hydrogen annealing of hole arrays on Si(001),” J. Appl. Phys. 105(8), 083536 (2009).
[Crossref]

S. De, A. Layek, A. Raja, A. Kadir, M. R. Gokhale, A. Bhattacharya, S. Dhar, and A. Chowdhury, “Two distinct origins of highly localized luminescent centers within InGaN/GaN quantum-well light-emitting diodes,” Adv. Funct. Mater. 21(20), 3828–3835 (2011).
[Crossref]

J. H. Son, J. U. Kim, Y. H. Song, B. J. Kim, C. J. Ryu, and J. L. Lee, “Design rule of nanostructures in light-emitting diodes for complete elimination of total internal reflection,” Adv. Mater. 24(17), 2259–2262 (2012).
[Crossref] [PubMed]

B. U. Ye, B. J. Kim, Y. H. Song, J. H. Son, H. K. Yu, M. H. Kim, J. L. Lee, and J. M. Baik, “Enhancing light emission of nanostructured vertical light-emitting diodes by minimizing total internal reflection,” Adv. Funct. Mater. 22(3), 632–639 (2012).
[Crossref]

P. G. Eliseev, P. Perlin, L. Lee, and M. Osinski, “Blue temperature-induced shift and band-tail emission in InGaN-based light sources,” Appl. Phys. Lett. 71(5), 569 (1997).
[Crossref]

C. Y. Cho, S. E. Kang, K. S. Kim, S. J. Lee, Y. S. Choi, S. H. Han, G. Y. Jung, and S. J. Park, “Enhanced light extraction in light-emitting diodes with photonic crystal structure selectively grown on p-GaN,” Appl. Phys. Lett. 96(18), 181110 (2010).
[Crossref]

Y. Zhang, S. W. Ryu, C. Yerino, B. Leung, Q. Sun, Q. Song, H. Cao, and J. Han, “A conductivity-based selective etching for next generation GaN devices,” Phys. Stat. Solidi B 247(7), 1713–1716 (2010).
[Crossref]

B. Li, Y. Feng, and Y. Liu, “An electrical model of InGaN based high power light emitting diodes with self-heating effect,” proc. SPIE 6669, 66691 (2007).
[Crossref]

J. Shakya, K. Knabe, K. H. Kim, J. Li, J. Y. Lin, and H. X. Jiang, “Polarization of III-nitride blue and ultraviolet light-emitting diodes,” Appl. Phys. Lett. 86(9), 091107 (2005).
[Crossref]

C. Kisielowski, J. Krüger, S. Ruvimov, T. Suski, J. W. Ager, E. Jones, Z. Liliental-Weber, M. Rubin, E. R. Weber, M. D. Bremser, and R. F. Davis, “Strain-related phenomena in GaN thin films,” Phys. Rev. B Condens. Matter 54(24), 17745–17753 (1996).
[Crossref] [PubMed]

C. C. Yang, C. F. Lin, K. T. Chen, R. H. Jiang, and C. M. Lin, “Direct-grown air-void structure in the InGaN light-emitting diodes,” IEEE Elec. Dev. Lett. 33(12), 1738–1740 (2012).
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C. C. Yang, C. F. Lin, K. T. Chen, R. H. Jiang, and C. M. Lin, “Direct-grown air-void structure in the InGaN light-emitting diodes,” IEEE Elec. Dev. Lett. 33(12), 1738–1740 (2012).
[Crossref]

J. Shakya, K. Knabe, K. H. Kim, J. Li, J. Y. Lin, and H. X. Jiang, “Polarization of III-nitride blue and ultraviolet light-emitting diodes,” Appl. Phys. Lett. 86(9), 091107 (2005).
[Crossref]

B. Li, Y. Feng, and Y. Liu, “An electrical model of InGaN based high power light emitting diodes with self-heating effect,” proc. SPIE 6669, 66691 (2007).
[Crossref]

S. M. de Sousa Pereira, M. A. Martins, T. Trindade, I. M. Watson, D. Zhu, and C. J. Humphreys, “Controlled integration of nanocrystals in inverted hexagonal nano-pits at the surface of light-emitting heterostructures,” Adv. Mater. 20(5), 1038–1043 (2008).
[Crossref]

M. Y. Ghannam, A. S. Alomar, J. Poortmans, and R. P. Mertens, “Interpretation of macropore shape transformation in crystalline silicon upon high temperature processing,” J. Appl. Phys. 108(7), 074902 (2010).
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S. F. Chichibu, A. C. Abare, M. S. Minsky, S. Keller, S. B. Fleischer, J. E. Bowers, E. Hu, U. K. Mishra, L. A. Coldren, S. P. DenBaars, and T. Sota, “Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures,” Appl. Phys. Lett. 73(14), 2006 (1998).
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S. F. Chichibu, A. C. Abare, M. S. Minsky, S. Keller, S. B. Fleischer, J. E. Bowers, E. Hu, U. K. Mishra, L. A. Coldren, S. P. DenBaars, and T. Sota, “Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures,” Appl. Phys. Lett. 73(14), 2006 (1998).
[Crossref]

T. Sato, I. Mizushima, S. Taniguchi, K. Takenaka, S. Shimonishi, H. Hayashi, M. Hatano, K. Sugihara, and Y. Tsunashima, “Fabrication of silicon-on-nothing structure by substrate engineering using the empty-space-in-silicon formation technique,” Jpn. J. Appl. Phys. 43(1), 12–18 (2004).
[Crossref]

J. Hader, J. V. Moloney, and S. W. Koch, “Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based diodes,” Appl. Phys. Lett. 96(22), 221106 (2010).
[Crossref]

M. A. Moram, R. A. Oliver, M. J. Kappers, and C. J. Humphreys, “The spatial distribution of threading dislocations in gallium nitride films,” Adv. Mater. 21(38–39), 3941–3944 (2009).
[Crossref]

S. Watanabe, N. Yamada, M. Nagashima, Y. Ueki, C. Sasaki, Y. Yamada, T. Taguchi, K. Tadatomo, H. Okagawa, and H. Kudo, “Internal quantum efficiency of highly-efficient InxGa1−xN-based near-ultraviolet light-emitting diodes,” Appl. Phys. Lett. 83(24), 4906 (2003).
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[Crossref]

S. Watanabe, N. Yamada, M. Nagashima, Y. Ueki, C. Sasaki, Y. Yamada, T. Taguchi, K. Tadatomo, H. Okagawa, and H. Kudo, “Internal quantum efficiency of highly-efficient InxGa1−xN-based near-ultraviolet light-emitting diodes,” Appl. Phys. Lett. 83(24), 4906 (2003).
[Crossref]

M. A. Moram, R. A. Oliver, M. J. Kappers, and C. J. Humphreys, “The spatial distribution of threading dislocations in gallium nitride films,” Adv. Mater. 21(38–39), 3941–3944 (2009).
[Crossref]

P. G. Eliseev, P. Perlin, L. Lee, and M. Osinski, “Blue temperature-induced shift and band-tail emission in InGaN-based light sources,” Appl. Phys. Lett. 71(5), 569 (1997).
[Crossref]

C. Y. Cho, S. E. Kang, K. S. Kim, S. J. Lee, Y. S. Choi, S. H. Han, G. Y. Jung, and S. J. Park, “Enhanced light extraction in light-emitting diodes with photonic crystal structure selectively grown on p-GaN,” Appl. Phys. Lett. 96(18), 181110 (2010).
[Crossref]

M. H. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. Piprek, and Y. J. Park, “Origin of efficiency droop in GaN-based light-emitting diodes,” Appl. Phys. Lett. 91(18), 183507 (2007).
[Crossref]

P. G. Eliseev, P. Perlin, L. Lee, and M. Osinski, “Blue temperature-induced shift and band-tail emission in InGaN-based light sources,” Appl. Phys. Lett. 71(5), 569 (1997).
[Crossref]

M. H. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. Piprek, and Y. J. Park, “Origin of efficiency droop in GaN-based light-emitting diodes,” Appl. Phys. Lett. 91(18), 183507 (2007).
[Crossref]

M. Y. Ghannam, A. S. Alomar, J. Poortmans, and R. P. Mertens, “Interpretation of macropore shape transformation in crystalline silicon upon high temperature processing,” J. Appl. Phys. 108(7), 074902 (2010).
[Crossref]

S. De, A. Layek, A. Raja, A. Kadir, M. R. Gokhale, A. Bhattacharya, S. Dhar, and A. Chowdhury, “Two distinct origins of highly localized luminescent centers within InGaN/GaN quantum-well light-emitting diodes,” Adv. Funct. Mater. 21(20), 3828–3835 (2011).
[Crossref]

J. S. Speck and S. J. Rosner, “The role of threading dislocations in the physical properties of GaN and its alloys,” Physica B 273, 24–32 (1999).
[Crossref]

C. Netzel, H. Bremers, L. Hoffmann, D. Fuhrmann, U. Rossow, and A. Hangleiter, “Emission and recombination characteristics of Ga1−xInxN/GaN quantum well structures with nonradiative recombination suppression by V-shaped pits,” Phys. Rev. B 76(15), 155322 (2007).
[Crossref]

C. Kisielowski, J. Krüger, S. Ruvimov, T. Suski, J. W. Ager, E. Jones, Z. Liliental-Weber, M. Rubin, E. R. Weber, M. D. Bremser, and R. F. Davis, “Strain-related phenomena in GaN thin films,” Phys. Rev. B Condens. Matter 54(24), 17745–17753 (1996).
[Crossref] [PubMed]

C. Kisielowski, J. Krüger, S. Ruvimov, T. Suski, J. W. Ager, E. Jones, Z. Liliental-Weber, M. Rubin, E. R. Weber, M. D. Bremser, and R. F. Davis, “Strain-related phenomena in GaN thin films,” Phys. Rev. B Condens. Matter 54(24), 17745–17753 (1996).
[Crossref] [PubMed]

J. H. Son, J. U. Kim, Y. H. Song, B. J. Kim, C. J. Ryu, and J. L. Lee, “Design rule of nanostructures in light-emitting diodes for complete elimination of total internal reflection,” Adv. Mater. 24(17), 2259–2262 (2012).
[Crossref] [PubMed]

Y. Zhang, S. W. Ryu, C. Yerino, B. Leung, Q. Sun, Q. Song, H. Cao, and J. Han, “A conductivity-based selective etching for next generation GaN devices,” Phys. Stat. Solidi B 247(7), 1713–1716 (2010).
[Crossref]

S. Watanabe, N. Yamada, M. Nagashima, Y. Ueki, C. Sasaki, Y. Yamada, T. Taguchi, K. Tadatomo, H. Okagawa, and H. Kudo, “Internal quantum efficiency of highly-efficient InxGa1−xN-based near-ultraviolet light-emitting diodes,” Appl. Phys. Lett. 83(24), 4906 (2003).
[Crossref]

T. Sato, I. Mizushima, S. Taniguchi, K. Takenaka, S. Shimonishi, H. Hayashi, M. Hatano, K. Sugihara, and Y. Tsunashima, “Fabrication of silicon-on-nothing structure by substrate engineering using the empty-space-in-silicon formation technique,” Jpn. J. Appl. Phys. 43(1), 12–18 (2004).
[Crossref]

M. H. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. Piprek, and Y. J. Park, “Origin of efficiency droop in GaN-based light-emitting diodes,” Appl. Phys. Lett. 91(18), 183507 (2007).
[Crossref]

M. H. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. Piprek, and Y. J. Park, “Origin of efficiency droop in GaN-based light-emitting diodes,” Appl. Phys. Lett. 91(18), 183507 (2007).
[Crossref]

J. Shakya, K. Knabe, K. H. Kim, J. Li, J. Y. Lin, and H. X. Jiang, “Polarization of III-nitride blue and ultraviolet light-emitting diodes,” Appl. Phys. Lett. 86(9), 091107 (2005).
[Crossref]

K. Sudoh, H. Iwasaki, R. Hiruta, H. Kuribayashi, and R. Shimizu, “Void shape evolution and formation of silicon-on-nothing structures during hydrogen annealing of hole arrays on Si(001),” J. Appl. Phys. 105(8), 083536 (2009).
[Crossref]

T. Sato, I. Mizushima, S. Taniguchi, K. Takenaka, S. Shimonishi, H. Hayashi, M. Hatano, K. Sugihara, and Y. Tsunashima, “Fabrication of silicon-on-nothing structure by substrate engineering using the empty-space-in-silicon formation technique,” Jpn. J. Appl. Phys. 43(1), 12–18 (2004).
[Crossref]

Y. R. Wu, R. Shivaraman, K. C. Wang, and J. S. Speck, “Analyzing the physical properties of InGaN multiple quantum well light emitting diodes from nano scale structure,” Appl. Phys. Lett. 101(8), 083505 (2012).
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B. U. Ye, B. J. Kim, Y. H. Song, J. H. Son, H. K. Yu, M. H. Kim, J. L. Lee, and J. M. Baik, “Enhancing light emission of nanostructured vertical light-emitting diodes by minimizing total internal reflection,” Adv. Funct. Mater. 22(3), 632–639 (2012).
[Crossref]

J. H. Son, J. U. Kim, Y. H. Song, B. J. Kim, C. J. Ryu, and J. L. Lee, “Design rule of nanostructures in light-emitting diodes for complete elimination of total internal reflection,” Adv. Mater. 24(17), 2259–2262 (2012).
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Y. Zhang, S. W. Ryu, C. Yerino, B. Leung, Q. Sun, Q. Song, H. Cao, and J. Han, “A conductivity-based selective etching for next generation GaN devices,” Phys. Stat. Solidi B 247(7), 1713–1716 (2010).
[Crossref]

J. H. Son, J. U. Kim, Y. H. Song, B. J. Kim, C. J. Ryu, and J. L. Lee, “Design rule of nanostructures in light-emitting diodes for complete elimination of total internal reflection,” Adv. Mater. 24(17), 2259–2262 (2012).
[Crossref] [PubMed]

B. U. Ye, B. J. Kim, Y. H. Song, J. H. Son, H. K. Yu, M. H. Kim, J. L. Lee, and J. M. Baik, “Enhancing light emission of nanostructured vertical light-emitting diodes by minimizing total internal reflection,” Adv. Funct. Mater. 22(3), 632–639 (2012).
[Crossref]

S. F. Chichibu, A. C. Abare, M. S. Minsky, S. Keller, S. B. Fleischer, J. E. Bowers, E. Hu, U. K. Mishra, L. A. Coldren, S. P. DenBaars, and T. Sota, “Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures,” Appl. Phys. Lett. 73(14), 2006 (1998).
[Crossref]

Y. R. Wu, R. Shivaraman, K. C. Wang, and J. S. Speck, “Analyzing the physical properties of InGaN multiple quantum well light emitting diodes from nano scale structure,” Appl. Phys. Lett. 101(8), 083505 (2012).
[Crossref]

J. S. Speck and S. J. Rosner, “The role of threading dislocations in the physical properties of GaN and its alloys,” Physica B 273, 24–32 (1999).
[Crossref]

K. Sudoh, H. Iwasaki, R. Hiruta, H. Kuribayashi, and R. Shimizu, “Void shape evolution and formation of silicon-on-nothing structures during hydrogen annealing of hole arrays on Si(001),” J. Appl. Phys. 105(8), 083536 (2009).
[Crossref]

T. Sato, I. Mizushima, S. Taniguchi, K. Takenaka, S. Shimonishi, H. Hayashi, M. Hatano, K. Sugihara, and Y. Tsunashima, “Fabrication of silicon-on-nothing structure by substrate engineering using the empty-space-in-silicon formation technique,” Jpn. J. Appl. Phys. 43(1), 12–18 (2004).
[Crossref]

Y. Zhang, S. W. Ryu, C. Yerino, B. Leung, Q. Sun, Q. Song, H. Cao, and J. Han, “A conductivity-based selective etching for next generation GaN devices,” Phys. Stat. Solidi B 247(7), 1713–1716 (2010).
[Crossref]

C. Kisielowski, J. Krüger, S. Ruvimov, T. Suski, J. W. Ager, E. Jones, Z. Liliental-Weber, M. Rubin, E. R. Weber, M. D. Bremser, and R. F. Davis, “Strain-related phenomena in GaN thin films,” Phys. Rev. B Condens. Matter 54(24), 17745–17753 (1996).
[Crossref] [PubMed]

S. Watanabe, N. Yamada, M. Nagashima, Y. Ueki, C. Sasaki, Y. Yamada, T. Taguchi, K. Tadatomo, H. Okagawa, and H. Kudo, “Internal quantum efficiency of highly-efficient InxGa1−xN-based near-ultraviolet light-emitting diodes,” Appl. Phys. Lett. 83(24), 4906 (2003).
[Crossref]

S. Watanabe, N. Yamada, M. Nagashima, Y. Ueki, C. Sasaki, Y. Yamada, T. Taguchi, K. Tadatomo, H. Okagawa, and H. Kudo, “Internal quantum efficiency of highly-efficient InxGa1−xN-based near-ultraviolet light-emitting diodes,” Appl. Phys. Lett. 83(24), 4906 (2003).
[Crossref]

T. Sato, I. Mizushima, S. Taniguchi, K. Takenaka, S. Shimonishi, H. Hayashi, M. Hatano, K. Sugihara, and Y. Tsunashima, “Fabrication of silicon-on-nothing structure by substrate engineering using the empty-space-in-silicon formation technique,” Jpn. J. Appl. Phys. 43(1), 12–18 (2004).
[Crossref]

T. Sato, I. Mizushima, S. Taniguchi, K. Takenaka, S. Shimonishi, H. Hayashi, M. Hatano, K. Sugihara, and Y. Tsunashima, “Fabrication of silicon-on-nothing structure by substrate engineering using the empty-space-in-silicon formation technique,” Jpn. J. Appl. Phys. 43(1), 12–18 (2004).
[Crossref]

S. M. de Sousa Pereira, M. A. Martins, T. Trindade, I. M. Watson, D. Zhu, and C. J. Humphreys, “Controlled integration of nanocrystals in inverted hexagonal nano-pits at the surface of light-emitting heterostructures,” Adv. Mater. 20(5), 1038–1043 (2008).
[Crossref]

T. Sato, I. Mizushima, S. Taniguchi, K. Takenaka, S. Shimonishi, H. Hayashi, M. Hatano, K. Sugihara, and Y. Tsunashima, “Fabrication of silicon-on-nothing structure by substrate engineering using the empty-space-in-silicon formation technique,” Jpn. J. Appl. Phys. 43(1), 12–18 (2004).
[Crossref]

S. Watanabe, N. Yamada, M. Nagashima, Y. Ueki, C. Sasaki, Y. Yamada, T. Taguchi, K. Tadatomo, H. Okagawa, and H. Kudo, “Internal quantum efficiency of highly-efficient InxGa1−xN-based near-ultraviolet light-emitting diodes,” Appl. Phys. Lett. 83(24), 4906 (2003).
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Y. R. Wu, R. Shivaraman, K. C. Wang, and J. S. Speck, “Analyzing the physical properties of InGaN multiple quantum well light emitting diodes from nano scale structure,” Appl. Phys. Lett. 101(8), 083505 (2012).
[Crossref]

S. Watanabe, N. Yamada, M. Nagashima, Y. Ueki, C. Sasaki, Y. Yamada, T. Taguchi, K. Tadatomo, H. Okagawa, and H. Kudo, “Internal quantum efficiency of highly-efficient InxGa1−xN-based near-ultraviolet light-emitting diodes,” Appl. Phys. Lett. 83(24), 4906 (2003).
[Crossref]

S. M. de Sousa Pereira, M. A. Martins, T. Trindade, I. M. Watson, D. Zhu, and C. J. Humphreys, “Controlled integration of nanocrystals in inverted hexagonal nano-pits at the surface of light-emitting heterostructures,” Adv. Mater. 20(5), 1038–1043 (2008).
[Crossref]

C. Kisielowski, J. Krüger, S. Ruvimov, T. Suski, J. W. Ager, E. Jones, Z. Liliental-Weber, M. Rubin, E. R. Weber, M. D. Bremser, and R. F. Davis, “Strain-related phenomena in GaN thin films,” Phys. Rev. B Condens. Matter 54(24), 17745–17753 (1996).
[Crossref] [PubMed]

Y. R. Wu, R. Shivaraman, K. C. Wang, and J. S. Speck, “Analyzing the physical properties of InGaN multiple quantum well light emitting diodes from nano scale structure,” Appl. Phys. Lett. 101(8), 083505 (2012).
[Crossref]

S. Watanabe, N. Yamada, M. Nagashima, Y. Ueki, C. Sasaki, Y. Yamada, T. Taguchi, K. Tadatomo, H. Okagawa, and H. Kudo, “Internal quantum efficiency of highly-efficient InxGa1−xN-based near-ultraviolet light-emitting diodes,” Appl. Phys. Lett. 83(24), 4906 (2003).
[Crossref]

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