Abstract

Extremely broadband emission is obtained from semiconductor optical amplifiers–superluminescent diodes with nonidentical quantum wells made of InGaAsP/InP materials. The well sequence is experimentally shown to have a significant influence on the emission spectra. With the three ${\mathrm{In}}_{0.67}{\mathrm{Ga}}_{0.33}{\mathrm{As}}_{0.72}{\mathrm{P}}_{0.28}$ quantum wells near the $n$-cladding layer and the two ${\mathrm{In}}_{0.53}{\mathrm{Ga}}_{0.47}\mathrm{As}$ quantum wells near the $p$-cladding layer, all bounded by ${\mathrm{In}}_{0.86}{\mathrm{Ga}}_{0.14}{\mathrm{As}}_{0.3}{\mathrm{P}}_{0.7}$ barriers, the emission spectrum could cover from less than 1.3 to nearly $1.55 \mu \mathrm{m}$, and the FWHM could be near 300 nm.

© 2001 Optical Society of America

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