Low-power 2&#xD7;2 silicon electro-optic switches based on double-ring assisted Mach&#x2013;Zehnder interferometers

Liangjun Lu; Linjie Zhou; Xinwan Li; Jianping Chen

doi:10.1364/OL.39.001633

Optics Letters
Vol. 39,
Issue 6,
pp. 1633-1636
(2014)
•https://doi.org/10.1364/OL.39.001633

Low-power 2×2 silicon electro-optic switches based on double-ring assisted Mach–Zehnder interferometers

Liangjun Lu, Linjie Zhou, Xinwan Li, and Jianping Chen

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Liangjun Lu, Linjie Zhou, Xinwan Li, and Jianping Chen, "Low-power 2×2 silicon electro-optic switches based on double-ring assisted Mach–Zehnder interferometers," Opt. Lett. 39, 1633-1636 (2014)

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Related Topics
Table of Contents Category
- Integrated Optics
Optics & Photonics Topics
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The topics in this list come from the Optics and Photonics Topics applied to this article.
Previously assigned OCIS codes
- Integrated optics (130.0130)
- Optical switching devices (130.4815)
- Resonators (230.5750)

About this Article
History
- Original Manuscript: December 6, 2013
- Revised Manuscript: February 14, 2014
- Manuscript Accepted: February 15, 2014
- Published: March 13, 2014

Abstract

We propose and experimentally demonstrate a low-power $2 \times 2$ silicon electro-optic (EO) switch consisting of a double-ring assisted Mach–Zehnder interferometer (DR-MZI). Active tuning elements based on p-i-n diodes and silicon resistive micro-heaters are embedded in the microrings for high-speed EO switching and low-loss thermo-optic (TO) tuning, respectively. The transmission spectrum shows the device can perform switching in a 60 GHz spectral window with a crosstalk less than $- 20 dB$ . After phase error correction with 2.31 mW TO power, the EO switch power from cross to bar states is only 0.69 mW. The rise and fall times of the switch are 405 and 414 ps, respectively. The switch operation of the device is verified by high-throughput optical signal transmission up to 25 Gbps.

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	Path	Power (mW)	IL (dB)	CT (dB)
Bar state	1–3	$2.31 + 0.69$	$- 1.8$	$- 24.4$
	2–4	$2.31 + 0.69$	$- 3.4$	$- 22.3$
Cross state	1–4	2.31	$- 2.1$	$- 23.8$
	2–3	2.31	$- 3.0$	$- 20.2$

Technologies	Power(mW)	IL (dB)	CT (dB)	Optical Bandwidth (nm)
MZI (FCD) [1]	$\sim 3$	$< 2.9$	$- 16$	$\sim 110$
MZI ( $FCD + TO$ ) [3]	$2.5 + 8.6$ ^a	$< 2.2$	$- 14$	$\sim 30$
MZI (FCD, double-gate) [5]	$40.8 / 19.1$	$3.5 / 2.5$	$- 31 / - 43$	$\sim 40$
CROW (2 MRRs, FCD) [7]	17.4	$< 2.0$	$- 9.8$	0.48
MRR (FCD) [10]	0.61	$\sim 7$	$\sim - 5$ ^b	0.45
This work (DR-MZI, $FCD + TO$ )	$0.69 + 2.31$	$< 3.4$	$< - 20$	0.48

	Path	Power (mW)	IL (dB)	CT (dB)
Bar state	1–3	$2.31 + 0.69$	$- 1.8$	$- 24.4$
	2–4	$2.31 + 0.69$	$- 3.4$	$- 22.3$
Cross state	1–4	2.31	$- 2.1$	$- 23.8$
	2–3	2.31	$- 3.0$	$- 20.2$

Technologies	Power(mW)	IL (dB)	CT (dB)	Optical Bandwidth (nm)
MZI (FCD) [1]	$\sim 3$	$< 2.9$	$- 16$	$\sim 110$
MZI ( $FCD + TO$ ) [3]	$2.5 + 8.6$ ^a	$< 2.2$	$- 14$	$\sim 30$
MZI (FCD, double-gate) [5]	$40.8 / 19.1$	$3.5 / 2.5$	$- 31 / - 43$	$\sim 40$
CROW (2 MRRs, FCD) [7]	17.4	$< 2.0$	$- 9.8$	0.48
MRR (FCD) [10]	0.61	$\sim 7$	$\sim - 5$ ^b	0.45
This work (DR-MZI, $FCD + TO$ )	$0.69 + 2.31$	$< 3.4$	$< - 20$	0.48

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