Abstract
We experimentally demonstrate integrated high-power germanium photodetectors (Ge PDs) by means of light field manipulation. Compared to the conventional Ge PD, the proposed structures have more uniform light distributions in the absorption region. A maximum photocurrent of 27.1 mA at bias voltage is experimentally obtained, demonstrating 50% more photocurrent generation under high-power illumination. Bandwidth and modulated signal measurements also verify the improved power handling capability. The proposed high-power Ge PD with compact size and large fabrication tolerance will bring new applications for silicon photonics.
© 2019 Optical Society of America
Full Article | PDF ArticleMore Like This
Yupeng Zhu, Zhi Liu, Chaoqun Niu, Yaqing Pang, Diandian Zhang, Xiangquan Liu, Jun Zheng, Yuhua Zuo, Haiyun Xue, and Buwen Cheng
Opt. Lett. 47(13) 3263-3266 (2022)
Xiao Hu, Dingyi Wu, Hongguang Zhang, Weizhong Li, Daigao Chen, Lei Wang, Xi Xiao, and Shaohua Yu
Photon. Res. 9(5) 749-756 (2021)
Xiao Hu, Dingyi Wu, Hongguang Zhang, Weizhong Li, Daigao Chen, Lei Wang, Xi Xiao, and Shaohua Yu
Opt. Express 28(25) 38343-38354 (2020)